GeneSiC Semiconductor 1N1199A

Name: 1N1199A
Brand: GeneSiC Semiconductor
SKU: 2430040-1N1199A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 1N1199A

Manufacturer:: GeneSiC Semiconductor

Ventron No:: 2430040-1N1199A

Description:: DIODE GEN PURP 50V 12A DO4

ECAD Model:

Datasheet:: 1N1199A

Specifications

GeneSiC Semiconductor 1N1199A technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor 1N1199A.

Lifecycle Status
PRODUCTION (Last Updated: 6 months ago)
Factory Lead Time
6 Weeks
Mount
Chassis, Stud
Mounting Type
Chassis, Stud Mount
Package / Case
DO-203AA, DO-4, Stud
Diode Element Material
SILICON
Packaging
Bulk
Published
2010
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
1
Terminal Position
UPPER
Terminal Form
SOLDER LUG
Base Part Number
1N1199
JESD-30 Code
O-MUPM-D1
Operating Temperature (Max)
200°C
Number of Elements
1
Configuration
SINGLE
Speed
Standard Recovery >500ns, > 200mA (Io)
Diode Type
Standard
Current - Reverse Leakage @ Vr
10μA @ 50V
Voltage - Forward (Vf) (Max) @ If
1.1V @ 12A
Case Connection
CATHODE
Forward Current
12A
Operating Temperature - Junction
-65°C~200°C
Max Surge Current
240A
Application
GENERAL PURPOSE
Max Reverse Voltage (DC)
50V
Average Rectified Current
12A
Number of Phases
1
Peak Reverse Current
10μA
Max Repetitive Reverse Voltage (Vrrm)
50V
Reverse Voltage
50V
RoHS Status
RoHS Compliant

Description

1N1199A Overview
A reasonable reverse voltage is 50V.The average rectified current for this device is 12A volts.When the forward current reaches 12A, it is allowed.The maximum surge current is 240A.A data chart shows that the peak reverse is 10μA in the datasheets.

1N1199A Features
an average rectified current of 12A volts
the peak reverse is 10μA

1N1199A Applications
There are a lot of GeneSiC Semiconductor
1N1199A applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

1N1199A More Descriptions

50V 12A DO-4 Silicon Stud Rectifier - Standard Recovery (Standard Configuration)
Diode Switching 50V 12A 2-Pin DO-4
Standard Recovery - 50 V - 12 A
Rectifiers 50V 12A Std. Recovery
Standard Recovery, 50V, 12A, Do-4; Repetitive Peak Reverse Voltage:50V; Average Forward Current:12A; Forward Voltage Max:1.2V; Diode Module Configuration:Single; Diode Case Style:Do-4; No. Of Pins:2Pins; Forward Surge Current:240A Rohs Compliant: Yes |Genesic Semiconductor 1N1199A

Product Comparison

The three parts on the right have similar specifications to 1N1199A.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Packaging

Published

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Position

Terminal Form

Base Part Number

JESD-30 Code

Operating Temperature (Max)

Number of Elements

Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Forward Current

Operating Temperature - Junction

Max Surge Current

Application

Max Reverse Voltage (DC)

Average Rectified Current

Number of Phases

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Reverse Voltage

RoHS Status

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Natural Thermal Resistance

Number of Pins

JESD-609 Code

ECCN Code

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Additional Feature

HTS Code

Subcategory

Element Configuration

Forward Voltage

Peak Non-Repetitive Surge Current

Max Forward Surge Current (Ifsm)

Height

Radiation Hardening

View Compare
1N1199A

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AA, DO-4, Stud

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N1199

O-MUPM-D1

200°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard

10μA @ 50V

1.1V @ 12A

CATHODE

12A

-65°C~200°C

240A

GENERAL PURPOSE

50V

12A

1

10μA

50V

50V

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
1N1186R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 6 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N1186R

O-MUPM-D1

190°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10μA @ 50V

1.2V @ 35A

ANODE

35A

-65°C~190°C

595A

GENERAL PURPOSE

200V

35A

1

10μA

200V

200V

RoHS Compliant

NOT SPECIFIED

NOT SPECIFIED

0.25 °C/W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N1199A vs 1N1186R
1N1189R

GeneSiC Semiconductor

PRODUCTION (Last Updated: 5 months ago)

6 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2010

yes

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N1189R

O-MUPM-D1

190°C

1

SINGLE

Standard Recovery >500ns, > 200mA (Io)

Standard, Reverse Polarity

10μA @ 50V

1.2V @ 35A

ANODE

35A

-65°C~190°C

595A

GENERAL PURPOSE

600V

35A

1

10μA

500V

500V

RoHS Compliant

-

-

0.25 °C/W

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

1N1199A vs 1N1189R
VS-1N1188

Vishay Semiconductor Diodes Division

-

13 Weeks

Chassis, Stud

Chassis, Stud Mount

DO-203AB, DO-5, Stud

SILICON

Bulk

2008

-

Active

1 (Unlimited)

1

UPPER

SOLDER LUG

1N1188

O-MUPM-D1

-

1

-

Standard Recovery >500ns, > 200mA (Io)

Standard

10mA @ 400V

1.7V @ 110A

CATHODE

35A

-65°C~190°C

400A

POWER

400V

35A

1

10mA

400V

400V

ROHS3 Compliant

-

-

0.25 °C/W

2

e3

EAR99

Tin (Sn) - with Nickel (Ni) barrier

190°C

-65°C

LOW LEAKAGE CURRENT

8541.10.00.80

Rectifier Diodes

Single

1.7V

400A

500A

36.9062mm

No

1N1199A vs VS-1N1188