Macronix MX25U25635FZ4I-08G
- Part Number:
- MX25U25635FZ4I-08G
- Manufacturer:
- Macronix
- Ventron No:
- 7371945-MX25U25635FZ4I-08G
- Description:
- 1.8V V 8 Pin Memory IC 8mm mm
- Datasheet:
- MX25U25635FZ4I-08G
Macronix MX25U25635FZ4I-08G technical specifications, attributes, parameters and parts with similar specifications to Macronix MX25U25635FZ4I-08G.
- Surface MountYES
- PackagingTray
- Published2017
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishTin (Sn)
- Additional FeatureCAN BE ORGNISED AS 256 MBIT X 1
- SubcategoryFlash Memories
- TechnologyCMOS
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1.27mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-N8
- Qualification StatusNot Qualified
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Supply Voltage-Max (Vsup)2V
- Power Supplies1.8V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)1.65V
- Operating ModeSYNCHRONOUS
- Clock Frequency133MHz
- Supply Current-Max0.025mA
- Organization64MX4
- Memory Width4
- Standby Current-Max0.00002A
- Memory Density268435456 bit
- Parallel/SerialSERIAL
- Memory IC TypeFLASH
- Programming Voltage1.8V
- Serial Bus TypeSPI
- Endurance100000 Write/Erase Cycles
- Data Retention Time-Min20
- Write ProtectionHARDWARE/SOFTWARE
- Alternate Memory Width2
- Length8mm
- Height Seated (Max)0.8mm
- Width6mm
- RoHS StatusRoHS Compliant
MX25U25635FZ4I-08G Overview
The case comes in Tray size. On the chip, there are 8 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 133MHz range. A memory device like this has 8 pins, indicating that there are 8 memory locations on the device. It also features CAN BE ORGNISED AS 256 MBIT X 1 to boost system performance despite all its merits. This memory chip requires only 1.8V of power. By integrating this memory with a SPI-type serial bus, data can be carried and transferred to the CPU easily. With a maximum supply current of 0.025mA , it is able to operate from a variety of supplies. A programming voltage of 1.8V is required to alter the state of certain nonvolatile memory arrays. The Flash Memories component is usually regarded as a type of this component. FLASH is the type of memory IC in this chip. Using ic memory chip above 85°C is recommended. Ic memory chip is designed to operate at a temperature of -40°C, otherwise the part will malfunctionWe generally refer to this device as a NOR TYPE device because that is what we call it in the industry.
MX25U25635FZ4I-08G Features
Additional Feature:CAN BE ORGNISED AS 256 MBIT X 1
MX25U25635FZ4I-08G Applications
There are a lot of Macronix
MX25U25635FZ4I-08G Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The case comes in Tray size. On the chip, there are 8 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 1.8V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 133MHz range. A memory device like this has 8 pins, indicating that there are 8 memory locations on the device. It also features CAN BE ORGNISED AS 256 MBIT X 1 to boost system performance despite all its merits. This memory chip requires only 1.8V of power. By integrating this memory with a SPI-type serial bus, data can be carried and transferred to the CPU easily. With a maximum supply current of 0.025mA , it is able to operate from a variety of supplies. A programming voltage of 1.8V is required to alter the state of certain nonvolatile memory arrays. The Flash Memories component is usually regarded as a type of this component. FLASH is the type of memory IC in this chip. Using ic memory chip above 85°C is recommended. Ic memory chip is designed to operate at a temperature of -40°C, otherwise the part will malfunctionWe generally refer to this device as a NOR TYPE device because that is what we call it in the industry.
MX25U25635FZ4I-08G Features
Additional Feature:CAN BE ORGNISED AS 256 MBIT X 1
MX25U25635FZ4I-08G Applications
There are a lot of Macronix
MX25U25635FZ4I-08G Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MX25U25635FZ4I-08G More Descriptions
NOR Flash Serial-SPI 1.8V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 8ns 8-Pin WSON EP
IC FLASH 256MBIT SPI/QUAD 8WSON
CMOS MXSMIO (Serial Multi I/O) Flash Memory 256Mb Capacity 256M x 1/128M x 2/64M x 4 Organization 133MHz Speed 1.8V Supply Voltage Surface Mount 8-Pin WSON Tray
IC FLASH 256MBIT SPI/QUAD 8WSON
CMOS MXSMIO (Serial Multi I/O) Flash Memory 256Mb Capacity 256M x 1/128M x 2/64M x 4 Organization 133MHz Speed 1.8V Supply Voltage Surface Mount 8-Pin WSON Tray
The three parts on the right have similar specifications to MX25U25635FZ4I-08G.
-
ImagePart NumberManufacturerSurface MountPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Operating Temperature (Min)Supply Voltage-Max (Vsup)Power SuppliesTemperature GradeSupply Voltage-Min (Vsup)Operating ModeClock FrequencySupply Current-MaxOrganizationMemory WidthStandby Current-MaxMemory DensityParallel/SerialMemory IC TypeProgramming VoltageSerial Bus TypeEnduranceData Retention Time-MinWrite ProtectionAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperatureSeriesVoltage - SupplyInterfaceMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageECCN CodeHTS CodeOperating Supply VoltageDensityLead FreePbfree CodeReflow Temperature-Max (s)View Compare
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MX25U25635FZ4I-08GYESTray2017e3Not For New Designs1 (Unlimited)8Tin (Sn)CAN BE ORGNISED AS 256 MBIT X 1Flash MemoriesCMOSDUALNO LEADNOT SPECIFIED11.8V1.27mmNOT SPECIFIED8R-PDSO-N8Not Qualified85°C-40°C2V1.8VINDUSTRIAL1.65VSYNCHRONOUS133MHz0.025mA64MX440.00002A268435456 bitSERIALFLASH1.8VSPI100000 Write/Erase Cycles20HARDWARE/SOFTWARE28mm0.8mm6mmRoHS Compliant---------------------
-
YESTube-e3Active3 (168 Hours)16MATTE TIN (800)CAN BE ORGNISED AS 128 MBIT X 1-FLASH - NORDUAL-26013V1.27mm4016----3.6V--2.7VSYNCHRONOUS104MHz-32MX44-134217728 bit--3V----210.3mm2.65mm7.52mmROHS3 Compliant16 WeeksSurface Mount16-SOIC (0.295, 7.50mm Width)16-40°C~85°C TAMX25xxx35/36 - MXSMIO™2.7V~3.6VSPI, Serial128Mb 16M x 8Non-VolatileFLASHSPI30μs, 1.5ms-------
-
YESTray2010-Active3 (168 Hours)8---FLASH - NORDUAL-NOT SPECIFIED13V1.27mmNOT SPECIFIED8R-PDSO-N8Not Qualified---3/3.3V-2.7VSYNCHRONOUS86MHz0.02mA1MX220.00001A---2.7VSPI100000 Write/Erase Cycles20HARDWARE/SOFTWARE16mm0.8mm5mmROHS3 Compliant10 WeeksSurface Mount8-WDFN Exposed Pad--40°C~85°C TAMX25xxx05/062.7V~3.6VSPI, Serial2Mb 256K x 8Non-VolatileFLASHSPI50μs, 3msEAR998542.32.00.513.6V2 MbLead Free--
-
YESTube2016e3Not For New Designs3 (168 Hours)8Matte Tin (Sn) - annealed--FLASH - NORDUAL-NOT SPECIFIED13V1.27mm-8R-PDSO-G8Not Qualified---3/3.3V-2.7VSYNCHRONOUS86MHz0.025mA8MX220.00002A---2.7VSPI100000 Write/Erase Cycles-HARDWARE/SOFTWARE15.28mm2.16mm5.23mmROHS3 Compliant16 WeeksSurface Mount8-SOIC (0.209, 5.30mm Width)--40°C~85°C TAMX25xxx05/062.7V~3.6VSPI, Serial16Mb 2M x 8Non-VolatileFLASHSPI50μs, 3msEAR998542.32.00.513.6V16 MbLead FreeyesNOT SPECIFIED
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