Macronix MX25U25635FXDI-10G
- Part Number:
- MX25U25635FXDI-10G
- Manufacturer:
- Macronix
- Ventron No:
- 7371940-MX25U25635FXDI-10G
- Description:
- Memory IC 8mm mm
- Datasheet:
- MX25U25635FXDI-10G
Macronix MX25U25635FXDI-10G technical specifications, attributes, parameters and parts with similar specifications to Macronix MX25U25635FXDI-10G.
- Surface MountYES
- PackagingTray
- Published2017
- Part StatusNot For New Designs
- Number of Terminations24
- Additional FeatureALSO CONFIGURABLE AS 256MX1
- TechnologyCMOS
- Terminal PositionBOTTOM
- Terminal FormBALL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1mm
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PBGA-B24
- Operating Temperature (Max)85°C
- Operating Temperature (Min)-40°C
- Supply Voltage-Max (Vsup)3.6V
- Temperature GradeINDUSTRIAL
- Supply Voltage-Min (Vsup)1.65V
- Operating ModeSYNCHRONOUS
- Clock Frequency108MHz
- Organization64MX4
- Memory Width4
- Memory Density268435456 bit
- Parallel/SerialSERIAL
- Memory IC TypeFLASH
- Programming Voltage1.8V
- Alternate Memory Width2
- Length8mm
- Height Seated (Max)1.2mm
- Width6mm
- RoHS StatusRoHS Compliant
MX25U25635FXDI-10G Overview
There is a Tray case available. The chip has 24 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.8V of power. It is important to note that the memory has a clock frequency rotation within the range of 108MHz. Despite all its merits, this chip also features ALSO CONFIGURABLE AS 256MX1 to boost system performance. Nonvolatile memory arrays require 1.8V programming voltage to change their state. This ic memory chip contains a FLASH memory IC. The product should only be used at temperatures greater than 85°C. In order for the part to work, it must operate at a temperature of -40°C, otherwise it will not work
MX25U25635FXDI-10G Features
Additional Feature:ALSO CONFIGURABLE AS 256MX1
MX25U25635FXDI-10G Applications
There are a lot of Macronix
MX25U25635FXDI-10G Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
There is a Tray case available. The chip has 24 terminations. For a comprehensive working procedure, this part supports as many as 1 functions. In order to operate this memory device, it must be supplied with 1.8V of power. It is important to note that the memory has a clock frequency rotation within the range of 108MHz. Despite all its merits, this chip also features ALSO CONFIGURABLE AS 256MX1 to boost system performance. Nonvolatile memory arrays require 1.8V programming voltage to change their state. This ic memory chip contains a FLASH memory IC. The product should only be used at temperatures greater than 85°C. In order for the part to work, it must operate at a temperature of -40°C, otherwise it will not work
MX25U25635FXDI-10G Features
Additional Feature:ALSO CONFIGURABLE AS 256MX1
MX25U25635FXDI-10G Applications
There are a lot of Macronix
MX25U25635FXDI-10G Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MX25U25635FXDI-10G More Descriptions
IC FLASH 256MBIT SPI/QU 24CSPBGA
CMOS MXSMIO (Serial Multi I/O) Flash Memory 256Mb Capacity 256M x 1/128M x 2/64M x 4 Organization 108MHz Speed 1.8V Supply Voltage Surface Mount 24-Ball BGA Tray
CMOS MXSMIO (Serial Multi I/O) Flash Memory 256Mb Capacity 256M x 1/128M x 2/64M x 4 Organization 108MHz Speed 1.8V Supply Voltage Surface Mount 24-Ball BGA Tray
The three parts on the right have similar specifications to MX25U25635FXDI-10G.
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ImagePart NumberManufacturerSurface MountPackagingPublishedPart StatusNumber of TerminationsAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Supply Voltage-Max (Vsup)Temperature GradeSupply Voltage-Min (Vsup)Operating ModeClock FrequencyOrganizationMemory WidthMemory DensityParallel/SerialMemory IC TypeProgramming VoltageAlternate Memory WidthLengthHeight Seated (Max)WidthRoHS StatusFactory Lead TimeMounting TypePackage / CaseNumber of PinsOperating TemperatureSeriesJESD-609 CodeMoisture Sensitivity Level (MSL)Terminal FinishVoltage - SupplyPin CountInterfaceMemory SizeMemory TypeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageECCN CodeHTS CodeQualification StatusOperating Supply VoltagePower SuppliesSupply Current-MaxDensityStandby Current-MaxSerial Bus TypeEnduranceData Retention Time-MinWrite ProtectionLead FreePbfree CodeReflow Temperature-Max (s)View Compare
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MX25U25635FXDI-10GYESTray2017Not For New Designs24ALSO CONFIGURABLE AS 256MX1CMOSBOTTOMBALLNOT SPECIFIED11.8V1mmNOT SPECIFIEDR-PBGA-B2485°C-40°C3.6VINDUSTRIAL1.65VSYNCHRONOUS108MHz64MX44268435456 bitSERIALFLASH1.8V28mm1.2mm6mmRoHS Compliant---------------------------------
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YESTube-Active16CAN BE ORGNISED AS 128 MBIT X 1FLASH - NORDUAL-26013V1.27mm40---3.6V-2.7VSYNCHRONOUS104MHz32MX44134217728 bit--3V210.3mm2.65mm7.52mmROHS3 Compliant16 WeeksSurface Mount16-SOIC (0.295, 7.50mm Width)16-40°C~85°C TAMX25xxx35/36 - MXSMIO™e33 (168 Hours)MATTE TIN (800)2.7V~3.6V16SPI, Serial128Mb 16M x 8Non-VolatileFLASHSPI30μs, 1.5ms---------------
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YESTray2010Active8-FLASH - NORDUAL-NOT SPECIFIED13V1.27mmNOT SPECIFIEDR-PDSO-N8----2.7VSYNCHRONOUS86MHz1MX22---2.7V16mm0.8mm5mmROHS3 Compliant10 WeeksSurface Mount8-WDFN Exposed Pad--40°C~85°C TAMX25xxx05/06-3 (168 Hours)-2.7V~3.6V8SPI, Serial2Mb 256K x 8Non-VolatileFLASHSPI50μs, 3msEAR998542.32.00.51Not Qualified3.6V3/3.3V0.02mA2 Mb0.00001ASPI100000 Write/Erase Cycles20HARDWARE/SOFTWARELead Free--
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YESTube2016Not For New Designs8-FLASH - NORDUAL-NOT SPECIFIED13V1.27mm-R-PDSO-G8----2.7VSYNCHRONOUS86MHz8MX22---2.7V15.28mm2.16mm5.23mmROHS3 Compliant16 WeeksSurface Mount8-SOIC (0.209, 5.30mm Width)--40°C~85°C TAMX25xxx05/06e33 (168 Hours)Matte Tin (Sn) - annealed2.7V~3.6V8SPI, Serial16Mb 2M x 8Non-VolatileFLASHSPI50μs, 3msEAR998542.32.00.51Not Qualified3.6V3/3.3V0.025mA16 Mb0.00002ASPI100000 Write/Erase Cycles-HARDWARE/SOFTWARELead FreeyesNOT SPECIFIED
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