Micron Technology Inc. MTFC4GMWDQ-3M AIT A
- Part Number:
- MTFC4GMWDQ-3M AIT A
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374457-MTFC4GMWDQ-3M AIT A
- Description:
- e•MMC™ Memory IC e•MMC™ Series
- Datasheet:
- MTFC4GMWDQ-3M AIT A
Micron Technology Inc. MTFC4GMWDQ-3M AIT A technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MTFC4GMWDQ-3M AIT A.
- Factory Lead Time7 Weeks
- Mounting TypeSurface Mount
- Package / Case100-LBGA
- Operating Temperature-40°C~85°C TA
- PackagingBulk
- Seriese•MMC™
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Memory Size32Gb 4G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceMMC
- Programming Voltage2.7V
- RoHS StatusROHS3 Compliant
MTFC4GMWDQ-3M AIT A Overview
Non-Volatile is the type of memory it has. There is a Bulk case available. The 100-LBGA case contains it. The chip has an 32Gb 4G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. In its target applications, this memory ics plays an important role as a member of the e•MMC™ series of memory devices. Nonvolatile memory arrays require 2.7V programming voltage to change their state.
MTFC4GMWDQ-3M AIT A Features
Package / Case: 100-LBGA
MTFC4GMWDQ-3M AIT A Applications
There are a lot of Micron Technology Inc.
MTFC4GMWDQ-3M AIT A Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Non-Volatile is the type of memory it has. There is a Bulk case available. The 100-LBGA case contains it. The chip has an 32Gb 4G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.7V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. In its target applications, this memory ics plays an important role as a member of the e•MMC™ series of memory devices. Nonvolatile memory arrays require 2.7V programming voltage to change their state.
MTFC4GMWDQ-3M AIT A Features
Package / Case: 100-LBGA
MTFC4GMWDQ-3M AIT A Applications
There are a lot of Micron Technology Inc.
MTFC4GMWDQ-3M AIT A Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MTFC4GMWDQ-3M AIT A More Descriptions
NAND Flash Serial e-MMC 3.3V 32G-bit 32G/8G/4G x 1/4-bit/8-bit Automotive 100-Pin LBGA T/R
Active Non-Volatile ROHS3Compliant MMC FLASH Memory -40C~85C TA 2.7V 32Gb 4G x 8
Flash Card 4G-bytes 2.7V to 3.6V Embedded MMC 100-Pin LBGA Tray
Flash Memory, 32Gbit, -40 To 85Deg C; Flash Memory Type:Emmc Nand; Memory Configuration:4G X 8Bit; Interfaces:Parallel; Ic Case/Package:Lbga; No. Of Pins:100Pins; Clock Frequency Max:200Mhz; Access Time:-; Supply Voltage Min:2.7V Rohs Compliant: Yes |Micron MTFC4GMWDQ-3M AIT A
Active Non-Volatile ROHS3Compliant MMC FLASH Memory -40C~85C TA 2.7V 32Gb 4G x 8
Flash Card 4G-bytes 2.7V to 3.6V Embedded MMC 100-Pin LBGA Tray
Flash Memory, 32Gbit, -40 To 85Deg C; Flash Memory Type:Emmc Nand; Memory Configuration:4G X 8Bit; Interfaces:Parallel; Ic Case/Package:Lbga; No. Of Pins:100Pins; Clock Frequency Max:200Mhz; Access Time:-; Supply Voltage Min:2.7V Rohs Compliant: Yes |Micron MTFC4GMWDQ-3M AIT A
The three parts on the right have similar specifications to MTFC4GMWDQ-3M AIT A.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceProgramming VoltageRoHS StatusSurface MountPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsTerminal PitchTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityParallel/SerialLengthHeight Seated (Max)WidthView Compare
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MTFC4GMWDQ-3M AIT A7 WeeksSurface Mount100-LBGA-40°C~85°C TABulke•MMC™Active3 (168 Hours)FLASH - NAND2.7V~3.6V32Gb 4G x 8Non-VolatileFLASHMMC2.7VROHS3 Compliant------------------------
-
8 WeeksSurface Mount153-VFBGA-40°C~85°C TATraye•MMC™Not For New Designs3 (168 Hours)FLASH - NAND1.7V~1.9V128Gb 16G x 8Non-VolatileFLASHMMC2.7VROHS3 CompliantYES2015e11533A991.B.1.ATIN SILVER COPPER8542.32.00.51BOTTOM26010.5mm30R-PBGA-B1533.6V2.7VSYNCHRONOUS16GX88137438953472 bitPARALLEL13mm1mm11.5mm
-
-Surface Mount100-TBGA-40°C~85°C TATape & Reel (TR)e•MMC™Not For New Designs3 (168 Hours)FLASH - NAND2.7V~3.6V32Gb 4G x 8Non-VolatileFLASHMMC-ROHS3 Compliant-----------------------
-
6 Weeks---Tape & Reel (TR)-Active--------------------------------
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