Micron Technology Inc. MT48V8M16LFB4-10:G
- Part Number:
- MT48V8M16LFB4-10:G
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7375063-MT48V8M16LFB4-10:G
- Description:
- 54 Pin Memory IC MT48V8M16 128 Mb kb 8mm mm
- Datasheet:
- MT48LCxMxxLF, MT48VxMxxLF
Micron Technology Inc. MT48V8M16LFB4-10:G technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT48V8M16LFB4-10:G.
- Mounting TypeSurface Mount
- Package / Case54-VFBGA
- Surface MountYES
- Number of Pins54
- Operating Temperature0°C~70°C TA
- PackagingBox
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)2 (1 Year)
- Number of Terminations54
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM - Mobile LPSDR
- Voltage - Supply2.3V~2.7V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.5V
- Terminal Pitch0.8mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT48V8M16
- Pin Count54
- Operating Supply Voltage2.5V
- Supply Voltage-Max (Vsup)2.7V
- Supply Voltage-Min (Vsup)2.3V
- Memory Size128Mb 8M x 16
- Number of Ports1
- Memory TypeVolatile
- Clock Frequency100MHz
- Supply Current-Max0.1mA
- Access Time7ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Data Bus Width16b
- Organization8MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Address Bus Width14b
- Density128 Mb
- Standby Current-Max0.00045A
- I/O TypeCOMMON
- Refresh Cycles4096
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Length8mm
- Height Seated (Max)1mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MT48V8M16LFB4-10:G Overview
In terms of its memory type, it can be classified as Volatile. The case comes in Box size. The case is embedded in 54-VFBGA. Memory size on the chip is 128Mb 8M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~70°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.3V~2.7V. The recommended mounting type for this device is Surface Mount. On the chip, there are 54 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 2.5V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 100MHz range. It is common to select similar parts by referring to the device's base part number, MT48V8M16. An 54-pin package is used to package this memory device. A memory device like this has 54 pins, indicating that there are 54 memory locations on the device. There is a note stating that this memory chip operates at 2.5V. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.1mA , it is able to operate from a variety of supplies.
MT48V8M16LFB4-10:G Features
Package / Case: 54-VFBGA
54 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48V8M16LFB4-10:G Applications
There are a lot of Micron Technology Inc.
MT48V8M16LFB4-10:G Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
In terms of its memory type, it can be classified as Volatile. The case comes in Box size. The case is embedded in 54-VFBGA. Memory size on the chip is 128Mb 8M x 16. This device uses takes advantage of the DRAM format. The device's extended operating temperature range of 0°C~70°C TA makes it ideal for many demanding applications. The device is capable of handling a supply voltage of 2.3V~2.7V. The recommended mounting type for this device is Surface Mount. On the chip, there are 54 terminations. The comprehensive working procedure is supported by 1 functions in this part. A voltage of 2.5V is required for the operation of this memory device. There is a clock frequency rotation of the memory within a 100MHz range. It is common to select similar parts by referring to the device's base part number, MT48V8M16. An 54-pin package is used to package this memory device. A memory device like this has 54 pins, indicating that there are 54 memory locations on the device. There is a note stating that this memory chip operates at 2.5V. It also features AUTO/SELF REFRESH to boost system performance despite all its merits. In this chip, there are 1 ports providing read and/or write access to one memory address. A memory mapped I/O port address of COMMON bits is used in this device. With a maximum supply current of 0.1mA , it is able to operate from a variety of supplies.
MT48V8M16LFB4-10:G Features
Package / Case: 54-VFBGA
54 Pins
Operating Supply Voltage:2.5V
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT48V8M16LFB4-10:G Applications
There are a lot of Micron Technology Inc.
MT48V8M16LFB4-10:G Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT48V8M16LFB4-10:G More Descriptions
DRAM Chip Mobile SDRAM 128M-Bit 8Mx16 2.5V 54-Pin VFBGA Tray
8M X 16 SYNCHRONOUS DRAM 7 ns PBGA54
IC SDRAM 128MBIT 100MHZ 54VFBGA
8M X 16 SYNCHRONOUS DRAM 7 ns PBGA54
IC SDRAM 128MBIT 100MHZ 54VFBGA
The three parts on the right have similar specifications to MT48V8M16LFB4-10:G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountNumber of PinsOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthLengthHeight Seated (Max)Radiation HardeningRoHS StatusLead FreeFactory Lead TimeSeriesJESD-30 CodeOperating ModeMemory DensityWidthSupplier Device PackageHTS CodeView Compare
-
MT48V8M16LFB4-10:GSurface Mount54-VFBGAYES540°C~70°C TABox2007e1yesDiscontinued2 (1 Year)54EAR99TIN SILVER COPPERAUTO/SELF REFRESHSDRAM - Mobile LPSDR2.3V~2.7VBOTTOM26012.5V0.8mm30MT48V8M16542.5V2.7V2.3V128Mb 8M x 161Volatile100MHz0.1mA7nsDRAMParallel16b8MX163-STATE1615ns14b128 Mb0.00045ACOMMON40961248FP12488mm1mmNoROHS3 CompliantLead Free---------
-
Surface Mount86-TFSOP (0.400, 10.16mm Width)YES--40°C~105°C TABulk2013--Obsolete3 (168 Hours)86--AUTO/SELF REFRESHSDRAM3V~3.6VDUAL-13.3V0.5mm-MT48LC2M32B2--3.6V3V64Mb 2M x 321Volatile167MHz-5.4nsDRAMParallel-2MX32-3212ns-------22.22mm1.2mm-ROHS3 Compliant-4 WeeksAutomotive, AEC-Q100R-PDSO-G86SYNCHRONOUS67108864 bit10.16mm--
-
Surface Mount90-VFBGA---40°C~85°C TATape & Reel (TR)2005--Discontinued2 (1 Year)----SDRAM - Mobile LPSDR1.7V~1.95V------MT48H8M32----256Mb 8M x 32-Volatile125MHz-7nsDRAMParallel----15ns----------Non-RoHS Compliant-------90-VFBGA (8x13)-
-
Surface Mount54-TSOP (0.400, 10.16mm Width)---40°C~85°C TATape & Reel (TR)2006-yesObsolete4 (72 Hours)-EAR99--SDRAM3V~3.6V------MT48LC32M16A254---512Mb 32M x 16-Volatile133MHz-5.4nsDRAMParallel----15ns----------ROHS3 Compliant--------8542.32.00.28
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