Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80D
- Part Number:
- MT29RZ4C8DZZMHAN-18W.80D
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374449-MT29RZ4C8DZZMHAN-18W.80D
- Description:
- Memory IC
- Datasheet:
- MT29RZ4C8DZZMHAN-18W.80D
Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80D technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29RZ4C8DZZMHAN-18W.80D.
- Operating Temperature-25°C~85°C TA
- PackagingTray
- Part StatusNot For New Designs
- TechnologyFLASH - NAND, DRAM - LPDDR2
- Voltage - Supply1.8V
- Memory Size4Gb 256M x 16 N 4G 128M x 32 LPDDR2
- Memory TypeNon-Volatile
- Clock Frequency533MHz
- Memory FormatFLASH, RAM
- Memory InterfaceParallel
MT29RZ4C8DZZMHAN-18W.80D Overview
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. On the chip, there is an 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 memory, which is the size of the chip's memory. There is a FLASH, RAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -25°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.8V volts. A clock frequency rotation within 533MHz is used for the ic memory chip to rotate data.
MT29RZ4C8DZZMHAN-18W.80D Features
MT29RZ4C8DZZMHAN-18W.80D Applications
There are a lot of Micron Technology Inc.
MT29RZ4C8DZZMHAN-18W.80D Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
A Non-Volatile-type memory can be classified as the memory type of this device. In addition, memory ics is available in a Tray case as well. On the chip, there is an 4Gb 256M x 16 N 4G 128M x 32 LPDDR2 memory, which is the size of the chip's memory. There is a FLASH, RAM-format memory used in this device, which is the memory format used by mainstream devices. Featuring an extended operating temperature range of -25°C~85°C TA, this device allows it to be used in a variety of demanding applications. The device is capable of handling a supply voltage of 1.8V volts. A clock frequency rotation within 533MHz is used for the ic memory chip to rotate data.
MT29RZ4C8DZZMHAN-18W.80D Features
MT29RZ4C8DZZMHAN-18W.80D Applications
There are a lot of Micron Technology Inc.
MT29RZ4C8DZZMHAN-18W.80D Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT29RZ4C8DZZMHAN-18W.80D More Descriptions
IC FLASH RAM 4G PARALLEL 533MHZ
IC FLASH 32M PARALLEL 48TSOP
OEMs, CMs ONLY (NO BROKERS)
MASSFLASH/LPDDR2 12G
IC FLASH 32M PARALLEL 48TSOP
OEMs, CMs ONLY (NO BROKERS)
MASSFLASH/LPDDR2 12G
The three parts on the right have similar specifications to MT29RZ4C8DZZMHAN-18W.80D.
-
ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusTechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceMounting TypePackage / CaseSeriesMoisture Sensitivity Level (MSL)RoHS StatusFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
-
MT29RZ4C8DZZMHAN-18W.80D-25°C~85°C TATrayNot For New DesignsFLASH - NAND, DRAM - LPDDR21.8V4Gb 256M x 16 N 4G 128M x 32 LPDDR2Non-Volatile533MHzFLASH, RAMParallel---------------------------
-
-40°C~105°C TATape & Reel (TR)Last Time BuyFLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelSurface Mount162-VFBGAAutomotive, AEC-Q1003 (168 Hours)ROHS3 Compliant---------------------
-
-40°C~85°C TATrayActiveFLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelSurface Mount130-VFBGA--RoHS Compliant16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-40°C~85°C TATrayLast Time BuyFLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelSurface Mount162-VFBGA-3 (168 Hours)----------------------
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