Micron Technology Inc. MT29F8G08ADBDAH4-AAT:D TR
- Part Number:
- MT29F8G08ADBDAH4-AAT:D TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374368-MT29F8G08ADBDAH4-AAT:D TR
- Description:
- Automotive, AEC-Q100 Memory IC Automotive, AEC-Q100 Series
- Datasheet:
- MT29F8G08ADBDAH4-AAT:D TR
Micron Technology Inc. MT29F8G08ADBDAH4-AAT:D TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F8G08ADBDAH4-AAT:D TR.
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Operating Temperature-40°C~105°C TA
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q100
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply1.7V~1.95V
- Memory Size8Gb 1G x 8
- Memory TypeNon-Volatile
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F8G08ADBDAH4-AAT:D TR Overview
Its memory type can be classified as Non-Volatile. It comes in a Tape & Reel (TR). It is available in 63-VFBGA case. The memory size of the chip is 8Gb 1G x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. As a member of the Automotive, AEC-Q100 series memory devices, this part plays an important role for its target applications.
MT29F8G08ADBDAH4-AAT:D TR Features
Package / Case: 63-VFBGA
MT29F8G08ADBDAH4-AAT:D TR Applications
There are a lot of Micron Technology Inc.
MT29F8G08ADBDAH4-AAT:D TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
Its memory type can be classified as Non-Volatile. It comes in a Tape & Reel (TR). It is available in 63-VFBGA case. The memory size of the chip is 8Gb 1G x 8 Mb. This device utilizes a FLASH format memory which is of mainstream design. With an extended designed operating temperature of -40°C~105°C TA, this device is capable of lots of demanding applications. It is supplied votage within 1.7V~1.95V. Its recommended mounting type is Surface Mount. As a member of the Automotive, AEC-Q100 series memory devices, this part plays an important role for its target applications.
MT29F8G08ADBDAH4-AAT:D TR Features
Package / Case: 63-VFBGA
MT29F8G08ADBDAH4-AAT:D TR Applications
There are a lot of Micron Technology Inc.
MT29F8G08ADBDAH4-AAT:D TR Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
MT29F8G08ADBDAH4-AAT:D TR More Descriptions
SLC NAND Flash Parallel 1.8V 8Gbit 1G X 8Bit 70ns 63-Pin VFBGA T/R
NAND Flash SLC 8G 1GX8 FBGA DDP
IC FLASH 8GBIT PARALLEL 63VFBGA
IC EEPROM 8K I2C 100KHZ 8TSSOP
NAND Flash SLC 8G 1GX8 FBGA DDP
IC FLASH 8GBIT PARALLEL 63VFBGA
IC EEPROM 8K I2C 100KHZ 8TSSOP
The three parts on the right have similar specifications to MT29F8G08ADBDAH4-AAT:D TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeMemory FormatMemory InterfaceRoHS StatusClock FrequencySurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F8G08ADBDAH4-AAT:D TR5 WeeksSurface Mount63-VFBGA-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100Active3 (168 Hours)FLASH - NAND1.7V~1.95V8Gb 1G x 8Non-VolatileFLASHParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Automotive, AEC-Q100Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-VolatileFLASH, RAMParallelROHS3 Compliant533MHz--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATray-Active-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-VolatileFLASH, RAMParallelRoHS Compliant200MHzYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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-Surface Mount162-VFBGA-40°C~85°C TATray-Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-VolatileFLASH, RAMParallel-533MHz--------------------
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