Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-R

Name: MT29F64G08CBCGBL04A3WC1-R
Brand: Micron Technology Inc.
SKU: 7374583-MT29F64G08CBCGBL04A3WC1-R
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT29F64G08CBCGBL04A3WC1-R

Manufacturer:: Micron Technology Inc.

Ventron No:: 7374583-MT29F64G08CBCGBL04A3WC1-R

Description:: Memory IC

ECAD Model:

Datasheet:: MT29F64G08CBCGBL04A3WC1-R

Specifications

Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-R technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F64G08CBCGBL04A3WC1-R.

Factory Lead Time
3 Weeks
Operating Temperature
0°C~70°C TA
Packaging
Bulk
Part Status
Active
Technology
FLASH - NAND
Voltage - Supply
2.7V~3.6V
Memory Size
64Gb 8G x 8
Memory Type
Non-Volatile
Memory Format
FLASH
Memory Interface
Parallel

Description

MT29F64G08CBCGBL04A3WC1-R Overview
There is a Non-Volatile memory type associated with this device. Bulk-cases are available. 64Gb 8G x 8 is the chip's memory size. FLASH-format memory is used in this device, which is a mainstream design. Due to its wide operating temperature range, this device can be used in a wide variety of demanding applications. The supply voltage can be up to 2.7V~3.6V.

MT29F64G08CBCGBL04A3WC1-R Features

MT29F64G08CBCGBL04A3WC1-R Applications
There are a lot of Micron Technology Inc.
MT29F64G08CBCGBL04A3WC1-R Memory applications.

mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer

MT29F64G08CBCGBL04A3WC1-R More Descriptions

Mlc 64G Die 8Gx8 |Micron MT29F64G08CBCGBL04A3WC1-R
IC FLASH 64GBIT PARALLEL DIE
IC DRAM 256M PARALLEL 60FBGA

Product Comparison

The three parts on the right have similar specifications to MT29F64G08CBCGBL04A3WC1-R.

Image

Part Number

Manufacturer

Factory Lead Time

Operating Temperature

Packaging

Part Status

Technology

Voltage - Supply

Memory Size

Memory Type

Memory Format

Memory Interface

Mounting Type

Package / Case

Series

Moisture Sensitivity Level (MSL)

Clock Frequency

RoHS Status

Surface Mount

Number of Terminations

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Height Seated (Max)

Length

Width

View Compare
MT29F64G08CBCGBL04A3WC1-R

Micron Technology Inc.

3 Weeks

0°C~70°C TA

Bulk

Active

FLASH - NAND

2.7V~3.6V

64Gb 8G x 8

Non-Volatile

FLASH

Parallel

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT29AZ5A3CHHWD-18AAT.84F TR

Micron Technology Inc.

-

-40°C~105°C TA

Tape & Reel (TR)

Last Time Buy

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2

Non-Volatile

FLASH, RAM

Parallel

Surface Mount

162-VFBGA

Automotive, AEC-Q100

3 (168 Hours)

533MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F64G08CBCGBL04A3WC1-R vs MT29AZ5A3CHHWD-18AAT.84F TR
MT29C1G12MAAIYAMR-5 AIT

Micron Technology Inc.

16 Weeks

-40°C~85°C TA

Tray

Active

FLASH - NAND, Mobile LPDRAM

1.7V~1.95V

1Gb 128M x 8 N 512M 16M x 32 LPDRAM

Non-Volatile

FLASH, RAM

Parallel

Surface Mount

130-VFBGA

-

-

200MHz

RoHS Compliant

YES

130

LPDRAM IS ORGANISED AS 32M X 16

BOTTOM

NOT SPECIFIED

1

1.8V

0.65mm

compliant

NOT SPECIFIED

R-PBGA-B130

1.95V

1.7V

SYNCHRONOUS

128MX8

8

1073741824 bit

1mm

9mm

8mm

MT29F64G08CBCGBL04A3WC1-R vs MT29C1G12MAAIYAMR-5 AIT
MT29AZ5A3CHHWD-18AIT.84F

Micron Technology Inc.

-

-40°C~85°C TA

Tray

Last Time Buy

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2

Non-Volatile

FLASH, RAM

Parallel

Surface Mount

162-VFBGA

-

3 (168 Hours)

533MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F64G08CBCGBL04A3WC1-R vs MT29AZ5A3CHHWD-18AIT.84F