Micron Technology Inc. MT29F64G08CBABAL84A3WC1-M
- Part Number:
- MT29F64G08CBABAL84A3WC1-M
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374568-MT29F64G08CBABAL84A3WC1-M
- Description:
- Memory IC
- Datasheet:
- MT29F64G08CBABAL84A3WC1-M
Micron Technology Inc. MT29F64G08CBABAL84A3WC1-M technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F64G08CBABAL84A3WC1-M.
- Factory Lead Time6 Weeks
- PackagingBulk
- Part StatusActive
- RoHS StatusRoHS Compliant
MT29F64G08CBABAL84A3WC1-M Overview
In addition, memory ics is available in a Bulk case as well.
MT29F64G08CBABAL84A3WC1-M Features
MT29F64G08CBABAL84A3WC1-M Applications
There are a lot of Micron Technology Inc.
MT29F64G08CBABAL84A3WC1-M Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
In addition, memory ics is available in a Bulk case as well.
MT29F64G08CBABAL84A3WC1-M Features
MT29F64G08CBABAL84A3WC1-M Applications
There are a lot of Micron Technology Inc.
MT29F64G08CBABAL84A3WC1-M Memory applications.
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
graphics card
MT29F64G08CBABAL84A3WC1-M More Descriptions
MLC NAND Flash 3.3V 64Gbit 8G X 8bit DIE
Mlc 64G Die 8Gx8 |Micron MT29F64G08CBABAL84A3WC1-M
IC DRAM 1G PARALLEL 60FBGA
Mlc 64G Die 8Gx8 |Micron MT29F64G08CBABAL84A3WC1-M
IC DRAM 1G PARALLEL 60FBGA
The three parts on the right have similar specifications to MT29F64G08CBABAL84A3WC1-M.
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ImagePart NumberManufacturerFactory Lead TimePackagingPart StatusRoHS StatusMounting TypePackage / CaseOperating TemperatureSeriesMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F64G08CBABAL84A3WC1-M6 WeeksBulkActiveRoHS Compliant---------------------------------
-
-Tape & Reel (TR)Last Time BuyROHS3 CompliantSurface Mount162-VFBGA-40°C~105°C TAAutomotive, AEC-Q1003 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel--------------------
-
16 WeeksTrayActiveRoHS CompliantSurface Mount130-VFBGA-40°C~85°C TA--FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-TrayLast Time Buy-Surface Mount162-VFBGA-40°C~85°C TA-3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel--------------------
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