Micron Technology Inc. MT29F2T08EMHAFJ4-3T:A

Name: MT29F2T08EMHAFJ4-3T:A
Brand: Micron Technology Inc.
SKU: 7374259-MT29F2T08EMHAFJ4-3T:A
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT29F2T08EMHAFJ4-3T:A

Manufacturer:: Micron Technology Inc.

Ventron No:: 7374259-MT29F2T08EMHAFJ4-3T:A

Description:: Memory IC

ECAD Model:

Datasheet:: MT29F2T08EMHAFJ4-3T:A

Specifications

Micron Technology Inc. MT29F2T08EMHAFJ4-3T:A technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F2T08EMHAFJ4-3T:A.

Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
132-VBGA
Operating Temperature
0°C~70°C TA
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Technology
FLASH - NAND
Voltage - Supply
2.5V~3.6V
Memory Size
2Tb 256G x 8
Memory Type
Non-Volatile
Clock Frequency
333MHz
Memory Format
FLASH
Memory Interface
Parallel
RoHS Status
ROHS3 Compliant

Description

MT29F2T08EMHAFJ4-3T:A Overview
Non-Volatile is the type of memory it has. There is a Tray case available. The 132-VBGA case contains it. The chip has an 2Tb 256G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.5V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 333MHz.

MT29F2T08EMHAFJ4-3T:A Features
Package / Case: 132-VBGA

MT29F2T08EMHAFJ4-3T:A Applications
There are a lot of Micron Technology Inc.
MT29F2T08EMHAFJ4-3T:A Memory applications.

cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,

MT29F2T08EMHAFJ4-3T:A More Descriptions

NAND Flash, 3D NAND Flash, 2Tb, 3.3V, 132-ball VBGA, RoHSMicron SCT
NAND Flash TLC 2T 256GX8 VBGA QDP
EEPROM Serial-SPI 64K-bit 8K x 8 1.8V/2.5V/3.3V/5V 8-Pin WLCSP T/R
TST B17A TLC 2Tbit 8 132/187 VBGA 4
128Gb to 1Tb Asynchronous/Synchronous NAND
Flash Memory, 2Tbit, 0 To 70Deg C; Flash Memory Type:Tlc Nand; Memory Configuration:256G X 8Bit; Interfaces:Parallel; Ic Case/Package:Vbga; No. Of Pins:132Pins; Clock Frequency Max:333Mhz; Access Time:-; Supply Voltage Min:- Rohs Compliant: Yes |Micron MT29F2T08EMHAFJ4-3T:A

Product Comparison

The three parts on the right have similar specifications to MT29F2T08EMHAFJ4-3T:A.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Voltage - Supply

Memory Size

Memory Type

Clock Frequency

Memory Format

Memory Interface

RoHS Status

Series

Surface Mount

Number of Terminations

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Number of Functions

Supply Voltage

Terminal Pitch

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Supply Voltage-Max (Vsup)

Supply Voltage-Min (Vsup)

Operating Mode

Organization

Memory Width

Memory Density

Height Seated (Max)

Length

Width

View Compare
MT29F2T08EMHAFJ4-3T:A

Micron Technology Inc.

12 Weeks

Surface Mount

132-VBGA

0°C~70°C TA

Tray

Active

3 (168 Hours)

FLASH - NAND

2.5V~3.6V

2Tb 256G x 8

Non-Volatile

333MHz

FLASH

Parallel

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT29AZ5A3CHHWD-18AAT.84F TR

Micron Technology Inc.

-

Surface Mount

162-VFBGA

-40°C~105°C TA

Tape & Reel (TR)

Last Time Buy

3 (168 Hours)

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2

Non-Volatile

533MHz

FLASH, RAM

Parallel

ROHS3 Compliant

Automotive, AEC-Q100

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F2T08EMHAFJ4-3T:A vs MT29AZ5A3CHHWD-18AAT.84F TR
MT29C1G12MAAIYAMR-5 AIT

Micron Technology Inc.

16 Weeks

Surface Mount

130-VFBGA

-40°C~85°C TA

Tray

Active

-

FLASH - NAND, Mobile LPDRAM

1.7V~1.95V

1Gb 128M x 8 N 512M 16M x 32 LPDRAM

Non-Volatile

200MHz

FLASH, RAM

Parallel

RoHS Compliant

-

YES

130

LPDRAM IS ORGANISED AS 32M X 16

BOTTOM

NOT SPECIFIED

1

1.8V

0.65mm

compliant

NOT SPECIFIED

R-PBGA-B130

1.95V

1.7V

SYNCHRONOUS

128MX8

8

1073741824 bit

1mm

9mm

8mm

MT29F2T08EMHAFJ4-3T:A vs MT29C1G12MAAIYAMR-5 AIT
MT29AZ5A3CHHWD-18AIT.84F

Micron Technology Inc.

-

Surface Mount

162-VFBGA

-40°C~85°C TA

Tray

Last Time Buy

3 (168 Hours)

FLASH - NAND, Mobile LPDRAM

1.7V~1.9V

4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2

Non-Volatile

533MHz

FLASH, RAM

Parallel

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT29F2T08EMHAFJ4-3T:A vs MT29AZ5A3CHHWD-18AIT.84F