Micron Technology Inc. MT29F256G08EBHBFB16C3WC1-FES
- Part Number:
- MT29F256G08EBHBFB16C3WC1-FES
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374427-MT29F256G08EBHBFB16C3WC1-FES
- Description:
- Memory IC
- Datasheet:
- MT29F256G08EBHBFB16C3WC1-FES
Micron Technology Inc. MT29F256G08EBHBFB16C3WC1-FES technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08EBHBFB16C3WC1-FES.
- Factory Lead Time8 Weeks
- PackagingBulk
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- RoHS StatusROHS3 Compliant
MT29F256G08EBHBFB16C3WC1-FES Overview
Case Bulk is available.
MT29F256G08EBHBFB16C3WC1-FES Features
MT29F256G08EBHBFB16C3WC1-FES Applications
There are a lot of Micron Technology Inc.
MT29F256G08EBHBFB16C3WC1-FES Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
Case Bulk is available.
MT29F256G08EBHBFB16C3WC1-FES Features
MT29F256G08EBHBFB16C3WC1-FES Applications
There are a lot of Micron Technology Inc.
MT29F256G08EBHBFB16C3WC1-FES Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F256G08EBHBFB16C3WC1-FES More Descriptions
IC EEPROM 2K I2C 400KHZ 8TSSOP
NAND Flash TLC 256G Die 32GX8
IC FLASH 256GBIT PARALLEL DIE
NAND Flash TLC 256G Die 32GX8
IC FLASH 256GBIT PARALLEL DIE
The three parts on the right have similar specifications to MT29F256G08EBHBFB16C3WC1-FES.
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ImagePart NumberManufacturerFactory Lead TimePackagingPart StatusMoisture Sensitivity Level (MSL)RoHS StatusMounting TypePackage / CaseOperating TemperatureSeriesTechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F256G08EBHBFB16C3WC1-FES8 WeeksBulkActive3 (168 Hours)ROHS3 Compliant--------------------------------
-
-Tape & Reel (TR)Last Time Buy3 (168 Hours)ROHS3 CompliantSurface Mount162-VFBGA-40°C~105°C TAAutomotive, AEC-Q100FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel--------------------
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16 WeeksTrayActive-RoHS CompliantSurface Mount130-VFBGA-40°C~85°C TA-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
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-TrayLast Time Buy3 (168 Hours)-Surface Mount162-VFBGA-40°C~85°C TA-FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel--------------------
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