Micron Technology Inc. MT29F1T08EEHBFJ4-T:B
- Part Number:
- MT29F1T08EEHBFJ4-T:B
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7374688-MT29F1T08EEHBFJ4-T:B
- Description:
- Memory IC
- Datasheet:
- MT29F1T08EEHBFJ4-T:B
Micron Technology Inc. MT29F1T08EEHBFJ4-T:B technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1T08EEHBFJ4-T:B.
- Factory Lead Time6 Weeks
- PackagingBulk
- Part StatusActive
MT29F1T08EEHBFJ4-T:B Overview
In addition, memory ics is available in a Bulk case as well.
MT29F1T08EEHBFJ4-T:B Features
MT29F1T08EEHBFJ4-T:B Applications
There are a lot of Micron Technology Inc.
MT29F1T08EEHBFJ4-T:B Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
In addition, memory ics is available in a Bulk case as well.
MT29F1T08EEHBFJ4-T:B Features
MT29F1T08EEHBFJ4-T:B Applications
There are a lot of Micron Technology Inc.
MT29F1T08EEHBFJ4-T:B Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
MT29F1T08EEHBFJ4-T:B More Descriptions
NAND Flash, 3D NAND Flash, 1Tb, 3.3V, 132-ball VBGA, RoHSMicron SCT
NAND Flash TLC 1T 128GX8 FBGA DDP
IC FLASH 1.125T PARALLEL 267MHZ
Flash Memory, 1Tbit, 0 To 70Deg C; Flash Memory Type:Tlc Nand; Memory Configuration:128G X 8Bit; Interfaces:Parallel; Ic Case/Package:Vbga; No. Of Pins:132Pins; Clock Frequency Max:-; Access Time:-; Supply Voltage Min:- Rohs Compliant: Yes |Micron MT29F1T08EEHBFJ4-T:B
NAND Flash TLC 1T 128GX8 FBGA DDP
IC FLASH 1.125T PARALLEL 267MHZ
Flash Memory, 1Tbit, 0 To 70Deg C; Flash Memory Type:Tlc Nand; Memory Configuration:128G X 8Bit; Interfaces:Parallel; Ic Case/Package:Vbga; No. Of Pins:132Pins; Clock Frequency Max:-; Access Time:-; Supply Voltage Min:- Rohs Compliant: Yes |Micron MT29F1T08EEHBFJ4-T:B
The three parts on the right have similar specifications to MT29F1T08EEHBFJ4-T:B.
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ImagePart NumberManufacturerFactory Lead TimePackagingPart StatusMounting TypePackage / CaseOperating TemperatureSeriesMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F1T08EEHBFJ4-T:B6 WeeksBulkActive----------------------------------
-
-Tape & Reel (TR)Last Time BuySurface Mount162-VFBGA-40°C~105°C TAAutomotive, AEC-Q1003 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 Compliant--------------------
-
16 WeeksTrayActiveSurface Mount130-VFBGA-40°C~85°C TA--FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS CompliantYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-TrayLast Time BuySurface Mount162-VFBGA-40°C~85°C TA-3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel---------------------
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