Vishay Semiconductor Diodes Division GSIB2520N-M3/45

Name: GSIB2520N-M3/45
Brand: Vishay Semiconductor Diodes Division
SKU: 8943808-GSIB2520N-M3/45
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: GSIB2520N-M3/45

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 8943808-GSIB2520N-M3/45

Description:: Single Phase Bridge Rectifier Standard Through Hole -55°C~150°C TJ 10μA @ 200V 1V @ 12.5A 4-Termination 1-Phase 4-SIP, GSIB-5S Tube

ECAD Model:

Datasheet:: GSIB2520N-M3/45

Specifications

Vishay Semiconductor Diodes Division GSIB2520N-M3/45 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division GSIB2520N-M3/45.

Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
4-SIP, GSIB-5S
Diode Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2015
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Additional Feature
UL RECOGNIZED
HTS Code
8541.10.00.80
Subcategory
Bridge Rectifier Diodes
Technology
Standard
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
4
JESD-30 Code
R-PSFM-T4
Number of Elements
4
Configuration
BRIDGE, 4 ELEMENTS
Diode Type
Single Phase
Current - Reverse Leakage @ Vr
10μA @ 200V
Voltage - Forward (Vf) (Max) @ If
1V @ 12.5A
Case Connection
ISOLATED
Output Current-Max
3.5A
Current - Average Rectified (Io)
25A
Number of Phases
1
Non-rep Pk Forward Current-Max
350A
Voltage - Peak Reverse (Max)
200V
Breakdown Voltage-Min
200V
RoHS Status
ROHS3 Compliant

Description

GSIB2520N-M3/45 Overview
The device has 4 pins.The component is available as a 4-SIP, GSIB-5S package.A Through Hole mounting method is used for the device.In order for rectifier to operate normally, rectifier must be kept at a temperature of -55°C~150°C TJ.A maximum voltage of 3.5A can be supported by it.

GSIB2520N-M3/45 Features
4 pin count
4-SIP, GSIB-5S package
operating at a temperature of -55°C~150°C TJ
the maximum output voltage of 3.5A

GSIB2520N-M3/45 Applications
There are a lot of Vishay Semiconductor Diodes Division
GSIB2520N-M3/45 applications of bridge rectifiers.

Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
Transportation – Traction rectifiers and auxiliary rectifiers

GSIB2520N-M3/45 More Descriptions

BRIDGE RECT 1P 200V 25A GSIB-5S
25A,200V,SINGLE INLINE BRIDGE
25A 200V BR GSIB-5S

Product Comparison

The three parts on the right have similar specifications to GSIB2520N-M3/45.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Diode Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Subcategory

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Number of Elements

Configuration

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Case Connection

Output Current-Max

Current - Average Rectified (Io)

Number of Phases

Non-rep Pk Forward Current-Max

Voltage - Peak Reverse (Max)

Breakdown Voltage-Min

RoHS Status

Number of Pins

JESD-609 Code

Pbfree Code

Terminal Finish

Element Configuration

Forward Current

Max Reverse Leakage Current

Max Surge Current

Forward Voltage

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Height

Length

Width

Radiation Hardening

Lead Free

View Compare
GSIB2520N-M3/45

Vishay Semiconductor Diodes Division

7 Weeks

Through Hole

Through Hole

4-SIP, GSIB-5S

SILICON

-55°C~150°C TJ

Tube

2015

Active

1 (Unlimited)

4

EAR99

UL RECOGNIZED

8541.10.00.80

Bridge Rectifier Diodes

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

R-PSFM-T4

4

BRIDGE, 4 ELEMENTS

Single Phase

10μA @ 200V

1V @ 12.5A

ISOLATED

3.5A

25A

1

350A

200V

200V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
GSIB6A40N-M3/45

Vishay Semiconductor Diodes Division

7 Weeks

Through Hole

Through Hole

4-SIP, GSIB-5S

SILICON

-55°C~150°C TJ

Tube

2015

Active

1 (Unlimited)

4

-

UL RECOGNIZED

8541.10.00.80

Bridge Rectifier Diodes

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

R-PSFM-T4

4

BRIDGE, 4 ELEMENTS

Single Phase

10μA @ 400V

1V @ 3A

ISOLATED

2.8A

15A

1

150A

400V

400V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GSIB2520N-M3/45 vs GSIB6A40N-M3/45
GSIB2580N-M3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-SIP, GSIB-5S

SILICON

-55°C~150°C TJ

Tube

2015

Active

1 (Unlimited)

4

-

UL RECOGNIZED

8541.10.00.80

Bridge Rectifier Diodes

Standard

NOT SPECIFIED

unknown

NOT SPECIFIED

4

R-PSFM-T4

4

BRIDGE, 4 ELEMENTS

Single Phase

10μA @ 800V

1V @ 12.5A

ISOLATED

3.5A

25A

1

350A

800V

800V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

GSIB2520N-M3/45 vs GSIB2580N-M3/45
GSIB15A20-E3/45

Vishay Semiconductor Diodes Division

10 Weeks

Through Hole

Through Hole

4-SIP, GSIB-5S

SILICON

-55°C~150°C TJ

Tube

2011

Active

1 (Unlimited)

4

EAR99

UL RECOGNIZED

-

Bridge Rectifier Diodes

Standard

-

-

-

4

-

1

-

Single Phase

10μA @ 200V

1V @ 7.5A

ISOLATED

-

-

1

-

-

-

ROHS3 Compliant

4

e3

yes

Matte Tin (Sn)

Single

3.5A

10μA

200A

1V

15A

10μA

200V

200A

20mm

30mm

4.6mm

No

Lead Free

GSIB2520N-M3/45 vs GSIB15A20-E3/45