Diodes Incorporated ZXMN6A09GTA
- Part Number:
- ZXMN6A09GTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2478142-ZXMN6A09GTA
- Description:
- MOSFET N-CH 60V 6.9A SOT223
- Datasheet:
- ZXMN6A09GTA
Diodes Incorporated ZXMN6A09GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A09GTA.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Number of Pins4
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2003
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance40mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating6.8A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation3.9W
- Case ConnectionDRAIN
- Turn On Delay Time4.9 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 8.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1407pF @ 40V
- Current - Continuous Drain (Id) @ 25°C5.4A Ta
- Gate Charge (Qg) (Max) @ Vgs24.2nC @ 5V
- Rise Time5ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)4.6 ns
- Turn-Off Delay Time25.3 ns
- Continuous Drain Current (ID)6.9A
- Threshold Voltage1V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- Height1.65mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXMN6A09GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1407pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.9A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25.3 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
ZXMN6A09GTA Features
a continuous drain current (ID) of 6.9A
the turn-off delay time is 25.3 ns
a threshold voltage of 1V
ZXMN6A09GTA Applications
There are a lot of Diodes Incorporated
ZXMN6A09GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1407pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.9A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25.3 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
ZXMN6A09GTA Features
a continuous drain current (ID) of 6.9A
the turn-off delay time is 25.3 ns
a threshold voltage of 1V
ZXMN6A09GTA Applications
There are a lot of Diodes Incorporated
ZXMN6A09GTA applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXMN6A09GTA More Descriptions
N-Channel 60 V 0.04 Ohm Enhancement Mode Mosfet - SOT-223
Trans MOSFET N-CH 60V 7.5A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 60V 7.5A SOT223 | Diodes Inc ZXMN6A09GTA
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Trans MOSFET N-CH 60V 7.5A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 60V 7.5A SOT223 | Diodes Inc ZXMN6A09GTA
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
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