ZXMN6A09GTA

Diodes Incorporated ZXMN6A09GTA

Part Number:
ZXMN6A09GTA
Manufacturer:
Diodes Incorporated
Ventron No:
2478142-ZXMN6A09GTA
Description:
MOSFET N-CH 60V 6.9A SOT223
ECAD Model:
Datasheet:
ZXMN6A09GTA

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Specifications
Diodes Incorporated ZXMN6A09GTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXMN6A09GTA.
  • Factory Lead Time
    17 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Number of Pins
    4
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2003
  • JESD-609 Code
    e3
  • Pbfree Code
    no
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    40mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Powers
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    6.8A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    2W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    3.9W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    4.9 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 8.2A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1407pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    5.4A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    24.2nC @ 5V
  • Rise Time
    5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4.6 ns
  • Turn-Off Delay Time
    25.3 ns
  • Continuous Drain Current (ID)
    6.9A
  • Threshold Voltage
    1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXMN6A09GTA Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1407pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.9A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25.3 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 4.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

ZXMN6A09GTA Features
a continuous drain current (ID) of 6.9A
the turn-off delay time is 25.3 ns
a threshold voltage of 1V


ZXMN6A09GTA Applications
There are a lot of Diodes Incorporated
ZXMN6A09GTA applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
ZXMN6A09GTA More Descriptions
N-Channel 60 V 0.04 Ohm Enhancement Mode Mosfet - SOT-223
Trans MOSFET N-CH 60V 7.5A 4-Pin(3 Tab) SOT-223 T/R
MOSFET N-Channel 60V 7.5A SOT223 | Diodes Inc ZXMN6A09GTA
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Transistor Polarity:N Channel; Continuous Drain Current, Id:6.9A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):0.045ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
MOSFET, N, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:60V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:3.9W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:45mohm; Package / Case:SOT-223; Power Dissipation Pd:2W; Power Dissipation Pd:3.9W; Power Dissipation Ptot Max:2W; Pulse Current Idm:30.6A; SMD Marking:ZXMN6A09; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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