STMicroelectronics X0202NN 5BA4
- Part Number:
- X0202NN 5BA4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2456833-X0202NN 5BA4
- Description:
- SCR 800V 1.25AMP SOT-223
- Datasheet:
- X0202NN 5BA4
STMicroelectronics X0202NN 5BA4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics X0202NN 5BA4.
- Factory Lead Time9 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Operating Temperature-40°C~125°C
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn) - annealed
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.30.00.80
- SubcategorySilicon Controlled Rectifiers
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberX0202
- JESD-30 CodeR-PDSO-G4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionANODE
- Trigger Device TypeSCR
- Voltage - Off State800V
- Voltage - Gate Trigger (Vgt) (Max)800mV
- Current - Non Rep. Surge 50, 60Hz (Itsm)22.5A 25A
- Current - Gate Trigger (Igt) (Max)200μA
- Current - Hold (Ih) (Max)5mA
- Current - On State (It (RMS)) (Max)1.25A
- Repetitive Peak Off-state Voltage800V
- Leakage Current (Max)0.5mA
- Current - On State (It (AV)) (Max)800mA
- Non-Repetitive Pk On-state Cur25 A
- SCR TypeSensitive Gate
- Voltage - On State (Vtm) (Max)1.45V
- Critical Rate of Rise of Off-State Voltage-Min10V/us
- Current - Off State (Max)5μA
- Repetitive Peak Reverse Voltage800V
- Holding Current-Max5mA
- RoHS StatusROHS3 Compliant
X0202NN 5BA4 Overview
This device's repetitive peak off-state voltage is 800V, the maximum peak voltage it allows across its off-state.Detecting leakage current on conductors can be an indication of insulation effectiveness, and its maximum leakage current can be 0.5mA.
X0202NN 5BA4 Features
the repetitive peak off-state voltage of this device is 800V
its maximal leakage current can be 0.5mA
X0202NN 5BA4 Applications
There are a lot of STMicroelectronics
X0202NN 5BA4 applications of SCRs thyristors.
DC motor control and drives
Battery charges
Welders
Power converters
Lighting control
Heat and temperature control
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind mill
This device's repetitive peak off-state voltage is 800V, the maximum peak voltage it allows across its off-state.Detecting leakage current on conductors can be an indication of insulation effectiveness, and its maximum leakage current can be 0.5mA.
X0202NN 5BA4 Features
the repetitive peak off-state voltage of this device is 800V
its maximal leakage current can be 0.5mA
X0202NN 5BA4 Applications
There are a lot of STMicroelectronics
X0202NN 5BA4 applications of SCRs thyristors.
DC motor control and drives
Battery charges
Welders
Power converters
Lighting control
Heat and temperature control
Motor starters
DC motor controls - AC motor controls
Uninterruptable power supplies
Wind mill
X0202NN 5BA4 More Descriptions
X02 Series 1.25 A 800 V Surface Mount Sensitive Gate SCR - SOT-223
Thyristor SCR 800V 25A 4-Pin(3 Tab) SOT-223 T/R
SCR 800V 1.25A SOT-223; Peak Repetitive Off-State Voltage, Vdrm: 800V; Gate Trigger Current Max, Igt: 200µA; Current It av: 800mA; On State RMS Current IT(rms): 1.25A; Thyristor Case Style: SOT-223; No. of Pins: 3Pins; Peak Non Rep Surge Current Itsm 50Hz: 25A; Holding Current Max Ih: 5mA; Gate Trigger Voltage Max Vgt: 800mV; Operating Temperature Max: 125°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Peak Gate Power: 200mW; Termination Type: Surface Mount Device; Thyristor Type: SCR
Thyristor Housing type: SOT-223 Conducting-state current: 1.25 A Ignition voltage: 0.8 V Periodic peak voltage: 800 V Voltage rise: 10 V/us
Thyristor SCR 800V 25A 4-Pin(3 Tab) SOT-223 T/R
SCR 800V 1.25A SOT-223; Peak Repetitive Off-State Voltage, Vdrm: 800V; Gate Trigger Current Max, Igt: 200µA; Current It av: 800mA; On State RMS Current IT(rms): 1.25A; Thyristor Case Style: SOT-223; No. of Pins: 3Pins; Peak Non Rep Surge Current Itsm 50Hz: 25A; Holding Current Max Ih: 5mA; Gate Trigger Voltage Max Vgt: 800mV; Operating Temperature Max: 125°C; Product Range: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Peak Gate Power: 200mW; Termination Type: Surface Mount Device; Thyristor Type: SCR
Thyristor Housing type: SOT-223 Conducting-state current: 1.25 A Ignition voltage: 0.8 V Periodic peak voltage: 800 V Voltage rise: 10 V/us
The three parts on the right have similar specifications to X0202NN 5BA4.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsConfigurationCase ConnectionTrigger Device TypeVoltage - Off StateVoltage - Gate Trigger (Vgt) (Max)Current - Non Rep. Surge 50, 60Hz (Itsm)Current - Gate Trigger (Igt) (Max)Current - Hold (Ih) (Max)Current - On State (It (RMS)) (Max)Repetitive Peak Off-state VoltageLeakage Current (Max)Current - On State (It (AV)) (Max)Non-Repetitive Pk On-state CurSCR TypeVoltage - On State (Vtm) (Max)Critical Rate of Rise of Off-State Voltage-MinCurrent - Off State (Max)Repetitive Peak Reverse VoltageHolding Current-MaxRoHS StatusOn-State Voltage-MaxView Compare
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X0202NN 5BA49 WeeksSurface MountTO-261-4, TO-261AAYES-40°C~125°CTape & Reel (TR)e3yesActive1 (Unlimited)4EAR99Matte Tin (Sn) - annealedHIGH RELIABILITY8541.30.00.80Silicon Controlled RectifiersDUALGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDX0202R-PDSO-G4Not Qualified1SINGLEANODESCR800V800mV22.5A 25A200μA5mA1.25A800V0.5mA800mA25 ASensitive Gate1.45V10V/us5μA800V5mAROHS3 Compliant--
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7 WeeksThrough HoleTO-226-3, TO-92-3 (TO-226AA)NO-40°C~125°CBulke3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY8541.30.00.80Silicon Controlled RectifiersBOTTOM-NOT SPECIFIED-NOT SPECIFIEDX0202O-PBCY-T3Not Qualified1SINGLE-SCR800V800mV22.5A 25A200μA5mA1.25A800V0.5mA800mA25 ASensitive Gate1.45V10V/us5μA800V5mAROHS3 Compliant-
-
7 WeeksThrough HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO-40°C~125°CTape & Box (TB)e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)HIGH RELIABILITY8541.30.00.80Silicon Controlled RectifiersBOTTOM-NOT SPECIFIED-NOT SPECIFIEDX0205O-PBCY-T3Not Qualified1SINGLE-SCR600V800mV22.5A 25A50μA5mA1.25A600V0.5mA800mA25 ASensitive Gate1.45V15V/us5μA600V5mAROHS3 Compliant-
-
-Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NO-40°C~125°CTape & Box (TB)--Obsolete3 (168 Hours)-EAR99---Silicon Controlled Rectifiers---unknown-X0203-----SCR600V800mV22.5A 25A200μA5mA1.25A600V0.2mA800mA25 ASensitive Gate1.45V25V/us5μA-5mAROHS3 Compliant1.4V
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