Vishay Semiconductor Diodes Division VSSB3L6S-M3/52T
- Part Number:
- VSSB3L6S-M3/52T
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 3812663-VSSB3L6S-M3/52T
- Description:
- DIODE SCHOTTKY 60V 2.6A DO214AA
- ECAD Model:
-
- Datasheet:
- VSSB3L6S-M3/52T
Vishay Semiconductor Diodes Division VSSB3L6S-M3/52T technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VSSB3L6S-M3/52T.
- Factory Lead Time11 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDO-214AA, SMB
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- SeriesTMBS®
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureFREE WHEELING DIODE, LOW POWER LOSS
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count2
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr1.2mA @ 60V
- Voltage - Forward (Vf) (Max) @ If590mV @ 3A
- Forward Current3A
- Operating Temperature - Junction-55°C~150°C
- ApplicationEFFICIENCY
- Forward Voltage590mV
- Max Reverse Voltage (DC)60V
- Average Rectified Current2.6A
- Number of Phases1
- Peak Reverse Current1.2mA
- Max Repetitive Reverse Voltage (Vrrm)60V
- Capacitance @ Vr, F358pF @ 4V 1MHz
- Peak Non-Repetitive Surge Current80A
- RoHS StatusROHS3 Compliant
VSSB3L6S-M3/52T Overview
This device's average rectified current is zero volts.A forward current of 3A is allowed.The datasheets show a peak reverse of 1.2mA, as shown in the data chart.
VSSB3L6S-M3/52T Features
an average rectified current of 2.6A volts
the peak reverse is 1.2mA
VSSB3L6S-M3/52T Applications
There are a lot of Vishay Semiconductor Diodes Division
VSSB3L6S-M3/52T applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
This device's average rectified current is zero volts.A forward current of 3A is allowed.The datasheets show a peak reverse of 1.2mA, as shown in the data chart.
VSSB3L6S-M3/52T Features
an average rectified current of 2.6A volts
the peak reverse is 1.2mA
VSSB3L6S-M3/52T Applications
There are a lot of Vishay Semiconductor Diodes Division
VSSB3L6S-M3/52T applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
VSSB3L6S-M3/52T More Descriptions
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2.6A, 60V V(RRM), Silicon, DO-214AA
Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier 3A 60V SMB (DO-214AA)
Diode Schottky 60V 3A 2-Pin SMB T/R
DIODE SCHOTTKY 60V 2.6A DO214AA
Surface-Mount TMBS (Trench MOS Barrier Schottky) Rectifier 3A 60V SMB (DO-214AA)
Diode Schottky 60V 3A 2-Pin SMB T/R
DIODE SCHOTTKY 60V 2.6A DO214AA
The three parts on the right have similar specifications to VSSB3L6S-M3/52T.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentOperating Temperature - JunctionApplicationForward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Capacitance @ Vr, FPeak Non-Repetitive Surge CurrentRoHS StatusJESD-609 CodeTerminal FinishJESD-30 CodeOperating Temperature (Max)ConfigurationOutput Current-MaxVoltage - DC Reverse (Vr) (Max)Non-rep Pk Forward Current-MaxReverse Current-MaxPbfree CodeSupplier Device PackageCurrent - Average Rectified (Io)View Compare
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VSSB3L6S-M3/52T11 WeeksSurface MountSurface MountDO-214AA, SMB2SILICONTape & Reel (TR)TMBS®2015Active1 (Unlimited)2EAR99150°C-55°CFREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80Rectifier DiodesDUALC BENDNOT SPECIFIEDunknownNOT SPECIFIED2Not Qualified1SingleFast Recovery =< 500ns, > 200mA (Io)Schottky1.2mA @ 60V590mV @ 3A3A-55°C~150°CEFFICIENCY590mV60V2.6A11.2mA60V358pF @ 4V 1MHz80AROHS3 Compliant------------- -
11 WeeksSurface MountSurface MountDO-214AA, SMB-SILICONTape & Reel (TR)TMBS®2015Active1 (Unlimited)2EAR99--FREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80-DUALC BENDNOT SPECIFIEDunknownNOT SPECIFIED--1-Fast Recovery =< 500ns, > 200mA (Io)Schottky250μA @ 100V770mV @ 4A--40°C~150°CEFFICIENCY-100V1.9A1--230pF @ 4V 1MHz-ROHS3 Compliante3Matte Tin (Sn)R-PDSO-C2150°CSINGLE4A100V80A250μA---
-
11 WeeksSurface MountSurface MountDO-214AA, SMB2SILICONTape & Reel (TR)TMBS®2014Active1 (Unlimited)2EAR99150°C-40°CFREE WHEELING DIODE, LOW POWER LOSS8541.10.00.80Rectifier DiodesDUALC BEND260unknown402Not Qualified1SingleFast Recovery =< 500ns, > 200mA (Io)Schottky250μA @ 100V700mV @ 3A3A-40°C~150°CEFFICIENCY700mV100V1.9A1250nA100V230pF @ 4V 1MHz80AROHS3 Compliante3Matte Tin (Sn)-------yes--
-
11 WeeksSurface MountSurface MountDO-214AA, SMB--Tape & Reel (TR)TMBS®2015Active1 (Unlimited)----------------Fast Recovery =< 500ns, > 200mA (Io)Schottky1.6mA @ 45V430mV @ 3.5A--40°C~150°C--45V3.8A---1068pF @ 4V 1MHz-ROHS3 Compliant------45V---DO-214AA (SMB)3.8A
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