VS-12CWQ10FNTRPBF

Vishay Semiconductor Diodes Division VS-12CWQ10FNTRPBF

Part Number:
VS-12CWQ10FNTRPBF
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2413234-VS-12CWQ10FNTRPBF
Description:
DIODE ARRAY SCHOTTKY 100V DPAK
ECAD Model:
Datasheet:
VS-12CWQ10FNPbF

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Specifications
Vishay Semiconductor Diodes Division VS-12CWQ10FNTRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-12CWQ10FNTRPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Cut Tape (CT)
  • Published
    2013
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    FREE WHEELING DIODE, HIGH RELIABILITY
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    12CWQ10
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Voltage
    100V
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Current
    10A
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    1mA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    800mV @ 6A
  • Forward Current
    12A
  • Max Reverse Leakage Current
    1mA
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    330A
  • Application
    HIGH POWER
  • Forward Voltage
    650mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    6A
  • Number of Phases
    1
  • Peak Reverse Current
    1mA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Peak Non-Repetitive Surge Current
    330A
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    330A
  • Natural Thermal Resistance
    1.5 °C/W
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
Description
VS-12CWQ10FNTRPBF Overview
In this case, the forward voltage has to be set at 650mV to operate the device.Maintaining a surge current under 330A and not letting it exceed it is the key to preventing it.Always operate the component at 100V volts.In this case, the forward voltage has to be set at 12A to operate the device.A reverse voltage peak of 1mA is applied to devices like this one.A semiconductor device's maximum reverse leakage current is 1mA, which is the current created by its reverse bias.

VS-12CWQ10FNTRPBF Features
650mV forward voltage
100V voltage
a peak voltage of 1mA
a reverse voltage peak of 1mA


VS-12CWQ10FNTRPBF Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-12CWQ10FNTRPBF applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
VS-12CWQ10FNTRPBF More Descriptions
DIODE ARRAY SCHOTTKY 100V DPAK / Rectifier Diode Schottky 100V 12A 3-Pin(2 Tab) DPAK T/R
Rectifier Diode, Single, 100 V, 12 A, TO-252, 2, 650 mV
SCHOTTKY RECTIFIER, COMMON CATHODE, 12A,
SCHOTTKY RECTIFIER, CMN CTHD, 12A, D-PAK
Schottky Diodes & Rectifiers 12 Amp 100 Volt Common Cathode
French Electronic Distributor since 1988
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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