VS-12CWQ10FNTR-M3

Vishay Semiconductor Diodes Division VS-12CWQ10FNTR-M3

Part Number:
VS-12CWQ10FNTR-M3
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
3063114-VS-12CWQ10FNTR-M3
Description:
DIODE ARRAY SCHOTTKY 100V DPAK
ECAD Model:
Datasheet:
VS-12CWQ10FNTR-M3

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Specifications
Vishay Semiconductor Diodes Division VS-12CWQ10FNTR-M3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-12CWQ10FNTR-M3.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Manufacturer Package Identifier
    95627
  • Packaging
    Tape & Reel (TR)
  • Published
    2016
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    FREE WHEELING DIODE, HIGH RELIABILITY
  • Capacitance
    183pF
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    1mA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    950mV @ 12A
  • Forward Current
    12A
  • Operating Temperature - Junction
    150°C Max
  • Output Current-Max
    6A
  • Application
    GENERAL PURPOSE
  • Forward Voltage
    950mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    6A
  • Number of Phases
    1
  • Peak Reverse Current
    1mA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Peak Non-Repetitive Surge Current
    330A
  • Reverse Voltage
    100V
  • Diode Configuration
    1 Pair Common Cathode
  • Max Forward Surge Current (Ifsm)
    330A
  • Max Junction Temperature (Tj)
    150°C
  • Height
    2.52mm
  • RoHS Status
    ROHS3 Compliant
Description
VS-12CWQ10FNTR-M3 Overview
In this case, the forward voltage has to be set at 950mV to operate the device.An output voltage of 6A is the maximum it can handle.In this case, the forward voltage has to be set at 12A to operate the device.In this device, there are approximately 183pF farads of capacitance.A reverse voltage peak of 1mA is applied to devices like this one.

VS-12CWQ10FNTR-M3 Features
950mV forward voltage
a maximum output voltage of 6A
183pF farads
a peak voltage of 1mA
a reverse voltage peak of 1mA


VS-12CWQ10FNTR-M3 Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-12CWQ10FNTR-M3 applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
VS-12CWQ10FNTR-M3 More Descriptions
Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 100V V(RRM), Silicon, TO-252AA
Rectifier Diode Schottky 100V 12A 3-Pin(2 Tab) DPAK T/R
VS-12CWQ10FN Series 100 V 6 A High Performance Schottky Rectifier - D-PAK-3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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