Vishay Semiconductor Diodes Division VS-10BQ100TRPBF
- Part Number:
- VS-10BQ100TRPBF
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2433033-VS-10BQ100TRPBF
- Description:
- DIODE SCHOTTKY 100V 1A SMB
- ECAD Model:
-
- Datasheet:
- VS-10BQ100PbF
Vishay Semiconductor Diodes Division VS-10BQ100TRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-10BQ100TRPBF.
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDO-214AA, SMB
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Additional FeatureHIGH RELIABILITY
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number10BQ100
- Pin Count2
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeSchottky
- Current - Reverse Leakage @ Vr500μA @ 100V
- Voltage - Forward (Vf) (Max) @ If780mV @ 1A
- Forward Current1A
- Max Reverse Leakage Current500μA
- Operating Temperature - Junction-55°C~175°C
- Max Surge Current780A
- Output Current-Max1A
- Forward Voltage620mV
- Max Reverse Voltage (DC)100V
- Average Rectified Current1A
- Peak Reverse Current500μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- Peak Non-Repetitive Surge Current780A
- Max Forward Surge Current (Ifsm)40A
- Natural Thermal Resistance36 °C/W
- Height2.4mm
- Length4.7mm
- Width3.8mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
VS-10BQ100TRPBF Overview
A reverse leakage current of 500μA volts can be generated by this device.A rectified current of 1A volts is averaged for this device.A value of 1A is the maximum forward current that can be allowed.As a heat property, thermal resistance is a measurement of a temperature difference that inhibits heat flow from an object or material, and it is 36 °C/W at natural temperatures.780A is the maximum value of surge current.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 1A.As indicated by the data chart in the datasheets, the peak reverse is 500μA.
VS-10BQ100TRPBF Features
a maximal reverse leakage current of 500μA volts
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500μA
VS-10BQ100TRPBF Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-10BQ100TRPBF applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A reverse leakage current of 500μA volts can be generated by this device.A rectified current of 1A volts is averaged for this device.A value of 1A is the maximum forward current that can be allowed.As a heat property, thermal resistance is a measurement of a temperature difference that inhibits heat flow from an object or material, and it is 36 °C/W at natural temperatures.780A is the maximum value of surge current.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 1A.As indicated by the data chart in the datasheets, the peak reverse is 500μA.
VS-10BQ100TRPBF Features
a maximal reverse leakage current of 500μA volts
an average rectified current of 1A volts
1A is the maximum value
the peak reverse is 500μA
VS-10BQ100TRPBF Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-10BQ100TRPBF applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
VS-10BQ100TRPBF More Descriptions
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 100V V(RRM), Silicon
16-bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B AM, Comparator 20-SOIC -40 to 85
DIODE, SCHOTTKY, 1A, 100V, SMB; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: DO-214AA; No. of Pins: 2Pins; Forward Voltage VF Max: 620mV; Forward Surge Current Ifsm Max: 40A; Operating Temperature Max: 175°C; Product Range: VS-10 Series; Automotive Qualification Standard: -; Alternate Case Style: DO-214AA; Avalanche Single Pulse Energy Eas: 9.7mJ; Case Temperature Tc: 124°C; Current If @ Vf: 1A; Current Ifsm: 780A; Current Ir Max: 500mA; Diode Type: Schottky; Junction Temperature Tj Max: 175°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Semiconductor Technology: Si; Termination Type: Surface Mount Device
16-bit Ultra-Low-Power Microcontroller, 1kB Flash, 128B AM, Comparator 20-SOIC -40 to 85
DIODE, SCHOTTKY, 1A, 100V, SMB; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: DO-214AA; No. of Pins: 2Pins; Forward Voltage VF Max: 620mV; Forward Surge Current Ifsm Max: 40A; Operating Temperature Max: 175°C; Product Range: VS-10 Series; Automotive Qualification Standard: -; Alternate Case Style: DO-214AA; Avalanche Single Pulse Energy Eas: 9.7mJ; Case Temperature Tc: 124°C; Current If @ Vf: 1A; Current Ifsm: 780A; Current Ir Max: 500mA; Diode Type: Schottky; Junction Temperature Tj Max: 175°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Semiconductor Technology: Si; Termination Type: Surface Mount Device
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