TIP35CP

STMicroelectronics TIP35CP

Part Number:
TIP35CP
Manufacturer:
STMicroelectronics
Ventron No:
2464753-TIP35CP
Description:
TRANS NPN 100V 25A TO-3P
ECAD Model:
Datasheet:
TIP35CP

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Specifications
STMicroelectronics TIP35CP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics TIP35CP.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-3P-3, SC-65-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    125W
  • Frequency
    3MHz
  • Base Part Number
    TIP35
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Gain Bandwidth Product
    3MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    25A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10 @ 15A 4V
  • Current - Collector Cutoff (Max)
    1mA
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 5A, 25A
  • Collector Emitter Breakdown Voltage
    100V
  • Transition Frequency
    3MHz
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    5V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
TIP35CP Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 15A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 25A volts.

TIP35CP Features
the DC current gain for this device is 10 @ 15A 4V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


TIP35CP Applications
There are a lot of STMicroelectronics
TIP35CP applications of single BJT transistors.


Inverter
Interface
Driver
Muting
TIP35CP More Descriptions
Trans GP BJT NPN 100V 25A 125000mW 3-Pin(3 Tab) TO-3P Tube
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
100V 125W 25A 10@15A4V 3MHz 4V@25A5A NPN 150¡Í@(Tj) TO-3P Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 100V, 25A, TO-3P; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Power Dissipation Pd: 125W; DC Collector Current: 25A; DC Current Gain hFE: 10hFE; Transistor Case Style: TO-3P; No. of Pin
Transistor, Npn, 100V, 25A, To-3P; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:25A; Power Dissipation:125W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:3Mhz Rohs Compliant: Yes |Stmicroelectronics TIP35CP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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