Fairchild/ON Semiconductor TIP107TU
- Part Number:
- TIP107TU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2464721-TIP107TU
- Description:
- TRANS PNP DARL 100V 8A TO-220
- Datasheet:
- TO220B03 Pkg Drawing TIP100-102,105-07
Fairchild/ON Semiconductor TIP107TU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor TIP107TU.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight1.214g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-100V
- Max Power Dissipation80W
- Current Rating-8A
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation2W
- Transistor TypePNP - Darlington
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current8A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A 4V
- Current - Collector Cutoff (Max)50μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)-100V
- Emitter Base Voltage (VEBO)-5V
- hFE Min1000
- Height16.51mm
- Length10.67mm
- Width4.83mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
TIP107TU Overview
This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 80mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 8A volts is possible.
TIP107TU Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
TIP107TU Applications
There are a lot of ON Semiconductor
TIP107TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 2.5V @ 80mA, 8A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at -5V.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A maximum collector current of 8A volts is possible.
TIP107TU Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
TIP107TU Applications
There are a lot of ON Semiconductor
TIP107TU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
TIP107TU More Descriptions
TIP Series PNP 2 W -100 V -8 A Epitaxial Darlington Transistor - TO-220-3
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3 Tab) TO-220AB Rail
DARLINGTON TRANSISTOR, PNP, -100V TO-220; DARLINGTON TRANSISTOR, PNP, -100V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Power Dissipation Pd:80W; DC Collector Current:-8A; DC Current Gain hFE:1000; No. of Pins:3; Current Rating:-8A
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 8A 2000mW 3-Pin(3 Tab) TO-220AB Rail
DARLINGTON TRANSISTOR, PNP, -100V TO-220; DARLINGTON TRANSISTOR, PNP, -100V TO-220; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-100V; Power Dissipation Pd:80W; DC Collector Current:-8A; DC Current Gain hFE:1000; No. of Pins:3; Current Rating:-8A
The three parts on the right have similar specifications to TIP107TU.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeContact PlatingBase Part NumberPin CountTransistor ApplicationMax Junction Temperature (Tj)VCEsat-MaxVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):HTS CodeTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusCase ConnectionPower - MaxPolarity/Channel TypeTransition FrequencyFrequency - TransitionView Compare
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TIP107TULAST SHIPMENTS (Last Updated: 2 days ago)6 WeeksThrough HoleThrough HoleTO-220-331.214gSILICON150°C TJTube2008e3yesObsolete1 (Unlimited)3EAR99Tin (Sn)Other Transistors-100V80W-8A1PNPSingle2WPNP - Darlington100V8A1000 @ 3A 4V50μATO-220AB2.5V @ 80mA, 8A100V2V-100V-5V100016.51mm10.67mm4.83mmNo SVHCNoRoHS CompliantLead Free--------------------------------
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ACTIVE (Last Updated: 7 months ago)8 WeeksThrough HoleThrough HoleTO-220-336.000006gSILICON150°C TJTube-e3-Active1 (Unlimited)3EAR99-Other Transistors100V65W5A1NPNSingle2WNPN - Darlington100V5A1000 @ 3A 3V500μATO-220AB4V @ 20mA, 5A100V4V100V5V100019.68mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead FreeTinTIP1223SWITCHING150°C4 V-------------------------
-
---------------------------------------------------60V2.5V @ 80mA, 8APNP - DarlingtonTO-220AB-2WTubeTO-220-3150°C (TJ)Through Hole-2000 @ 3A, 4V50µA8A-----------
-
--Through HoleThrough HoleTO-220-3--SILICON-65°C~150°C TJBulk2016e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)Other Transistors-80W-1---NPN - Darlington2.5V8A1000 @ 3A 4V50μATO-220AB2.5V @ 80mA, 8A60V---------RoHS Compliant---3SWITCHING----------------8541.29.00.95SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3Not QualifiedCOLLECTOR80WNPN4MHz4MHz
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