VISHAY Si4178DY-T1-GE3
- Part Number:
- Si4178DY-T1-GE3
- Manufacturer:
- VISHAY
- Ventron No:
- 6189436-Si4178DY-T1-GE3
- Description:
- ECAD Model:
-
- Datasheet:
- Si4178DY-T1-GE3
VISHAY Si4178DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY Si4178DY-T1-GE3.
- Vgs(th) (Max) @ Id:2.8V @ 250µA
- Vgs (Max):±25V
- Technology:MOSFET (Metal Oxide)
- Supplier Device Package:8-SO
- Series:TrenchFET®
- Rds On (Max) @ Id, Vgs:21 mOhm @ 8.4A, 10V
- Power Dissipation (Max):2.4W (Ta), 5W (Tc)
- Packaging:Tape & Reel (TR)
- Package / Case:8-SOIC (0.154", 3.90mm Width)
- Other Names:SI4178DY-T1-GE3TR
SI4178DYT1GE3 - Operating Temperature:-55°C ~ 150°C (TJ)
- Mounting Type:Surface Mount
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Lead Free Status / RoHS Status:Lead free / RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds:405pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs:12nC @ 10V
- FET Type:N-Channel
- FET Feature:-
- Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
- Drain to Source Voltage (Vdss):30V
- Detailed Description:N-Channel 30V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO
- Current - Continuous Drain (Id) @ 25°C:12A (Tc)
part No. Si4178DY-T1-GE3 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
Si4178DY-T1-GE3 More Descriptions
N-Channel 30 V 0.021 Ohm 5 W Surface Mount Power Mosfet - SOIC-8
SI4178DY-T1-GE3 N-channel MOSFET Transistor, 12 A, 30 V, 8-Pin SOIC | Siliconix / Vishay SI4178DY-T1-GE3
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC N T/R
MOSFET, N-CH, 30V, 12A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
SI4178DY-T1-GE3 N-channel MOSFET Transistor, 12 A, 30 V, 8-Pin SOIC | Siliconix / Vishay SI4178DY-T1-GE3
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC N T/R
MOSFET, N-CH, 30V, 12A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
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