Vishay Semiconductor Diodes Division SS1H10HE3/5AT

Name: SS1H10HE3/5AT
Brand: Vishay Semiconductor Diodes Division
SKU: 3582291-SS1H10HE3/5AT
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SS1H10HE3/5AT

Manufacturer:: Vishay Semiconductor Diodes Division

Ventron No:: 3582291-SS1H10HE3/5AT

Description:: DIODE SCHOTTKY 100V 1A DO214AC

ECAD Model:

Datasheet:: SS1H10HE3/5AT

Specifications

Vishay Semiconductor Diodes Division SS1H10HE3/5AT technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division SS1H10HE3/5AT.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Number of Pins
2
Supplier Device Package
DO-214AC (SMA)
Packaging
Tape & Reel (TR)
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Base Part Number
SS1H10
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1μA @ 100V
Voltage - Forward (Vf) (Max) @ If
770mV @ 1A
Forward Current
1A
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
175°C Max
Max Surge Current
50A
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
1A
Forward Voltage
860mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
1A
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
50A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SS1H10HE3/5AT Overview
In this device, the maximum reverse leakage current is 1μA volts.The average rectified current for this device is 1A volts.When the forward current reaches 1A, it is allowed.The maximum surge current is 50A.A data chart shows that the peak reverse is 1μA in the datasheets.

SS1H10HE3/5AT Features
a maximal reverse leakage current of 1μA volts
an average rectified current of 1A volts
the peak reverse is 1μA

SS1H10HE3/5AT Applications
There are a lot of Vishay Semiconductor Diodes Division
SS1H10HE3/5AT applications of single-phase diode rectifier.

DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode

Product Comparison

The three parts on the right have similar specifications to SS1H10HE3/5AT.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Base Part Number

Element Configuration

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Forward Current

Max Reverse Leakage Current

Operating Temperature - Junction

Max Surge Current

Voltage - DC Reverse (Vr) (Max)

Current - Average Rectified (Io)

Forward Voltage

Max Reverse Voltage (DC)

Average Rectified Current

Peak Reverse Current

Max Repetitive Reverse Voltage (Vrrm)

Peak Non-Repetitive Surge Current

Radiation Hardening

RoHS Status

Factory Lead Time

Diode Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Output Current-Max

Series

Pbfree Code

Subcategory

Reverse Recovery Time

Max Forward Surge Current (Ifsm)

REACH SVHC

View Compare
SS1H10HE3/5AT

Vishay Semiconductor Diodes Division

Surface Mount

Surface Mount

DO-214AC, SMA

2

DO-214AC (SMA)

Tape & Reel (TR)

2012

Obsolete

1 (Unlimited)

175°C

-65°C

SS1H10

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1μA @ 100V

770mV @ 1A

1A

1μA

175°C Max

50A

100V

1A

860mV

100V

1A

1μA

100V

50A

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SS1H9-M3/61T

Vishay Semiconductor Diodes Division

Surface Mount

Surface Mount

DO-214AC, SMA

-

-

Tape & Reel (TR)

2014

Active

1 (Unlimited)

-

-

-

-

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1μA @ 90V

860mV @ 2A

-

-

-65°C~175°C

-

90V

-

-

90V

1A

-

-

-

-

ROHS3 Compliant

11 Weeks

SILICON

e3

2

EAR99

Matte Tin (Sn)

FREE WHEELING DIODE, LOW POWER LOSS

8541.10.00.80

DUAL

C BEND

260

unknown

30

2

R-PDSO-C2

Not Qualified

175°C

1

SINGLE

1A

-

-

-

-

-

-

SS1H10HE3/5AT vs SS1H9-M3/61T
SS1H10HE3_A/H

Vishay Semiconductor Diodes Division

Surface Mount

Surface Mount

DO-214AC, SMA

2

DO-214AC (SMA)

Tape & Reel (TR)

2013

Obsolete

1 (Unlimited)

175°C

-65°C

SS1H10

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1μA @ 100V

770mV @ 1A

-

-

-65°C~175°C

-

100V

1A

860mV

100V

1A

-

100V

50A

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Automotive, AEC-Q101

-

-

-

-

-

SS1H10HE3/5AT vs SS1H10HE3_A/H
SS1H9-E3/5AT

Vishay Semiconductor Diodes Division

Surface Mount, Through Hole

Surface Mount

DO-214AC, SMA

2

-

Tape & Reel (TR)

2006

Active

1 (Unlimited)

175°C

-65°C

SS1H9

Single

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

1μA @ 90V

770mV @ 1A

1A

1μA

175°C Max

50A

-

-

770mV

90V

1A

1μA

90V

50A

No

ROHS3 Compliant

11 Weeks

SILICON

e3

2

EAR99

Matte Tin (Sn)

LOW POWER LOSS

8541.10.00.80

DUAL

C BEND

260

-

40

2

-

-

-

1

-

1A

-

yes

Rectifier Diodes

75 ns

50A

Unknown

SS1H10HE3/5AT vs SS1H9-E3/5AT