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SMMUN2214LT1G

ON Semiconductor SMMUN2214LT1G

Part Number:
SMMUN2214LT1G
Manufacturer:
ON Semiconductor
Ventron No:
2469608-SMMUN2214LT1G
Description:
TRANS PREBIAS NPN 0.246W SOT-23
ECAD Model:
Datasheet:
SMMUN2214LT1G

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Specifications
ON Semiconductor SMMUN2214LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor SMMUN2214LT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 4.7
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    246mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    MMUN22**L
  • Pin Count
    3
  • Reference Standard
    AEC-Q101
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Collector Emitter Saturation Voltage
    250mV
  • Max Breakdown Voltage
    50V
  • hFE Min
    80
  • Resistor - Base (R1)
    10 k Ω
  • Resistor - Emitter Base (R2)
    47 k Ω
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SMMUN2214LT1G Description
The SMMUN2214LT1G is an NPN Bipolar Digital Transistor (BRT)  designed to replace a single device and its external resistor bias network.

SMMUN2214LT1G Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications 

SMMUN2214LT1G Applications
Inverter
Interface circuit
Driver circuit
SMMUN2214LT1G More Descriptions
Trans Digital BJT NPN 50V 100mA 400mW Automotive 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Digital Transistor NPN R=10K R=47K SOT23 | ON Semiconductor SMMUN2214LT1G
NPN Bipolar Digital Transistor (BRT)
Product Comparison
The three parts on the right have similar specifications to SMMUN2214LT1G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Base Part Number
    Pin Count
    Reference Standard
    Number of Elements
    Polarity
    Element Configuration
    Transistor Application
    Halogen Free
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    hFE Min
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Power - Max
    Collector Base Voltage (VCBO)
    View Compare
  • SMMUN2214LT1G
    SMMUN2214LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    4 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTANCE RATIO IS 4.7
    BIP General Purpose Small Signal
    246mW
    DUAL
    GULL WING
    MMUN22**L
    3
    AEC-Q101
    1
    NPN
    Single
    SWITCHING
    Halogen Free
    NPN - Pre-Biased
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    250mV
    50V
    80
    10 k Ω
    47 k Ω
    1.01mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
  • SMMUN2113LT1G
    SMMUN2113LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTANCE RATIO IS 1
    BIP General Purpose Small Signal
    400mW
    DUAL
    GULL WING
    MMUN21**L
    3
    AEC-Q101
    1
    PNP
    Single
    SWITCHING
    Halogen Free
    PNP - Pre-Biased
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    -
    250mV
    -
    80
    47 k Ω
    47 k Ω
    1.01mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    246mW
    -
    SMMUN2214LT1G vs SMMUN2113LT1G
  • SMMUN2213LT3G
    SMMUN2213LT3G
    ON Semiconductor
    ACTIVE (Last Updated: 20 hours ago)
    4 Weeks
    -
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2012
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTANCE RATIO IS 1
    -
    246mW
    DUAL
    GULL WING
    MMUN22**L
    3
    AEC-Q101
    1
    NPN
    Single
    SWITCHING
    Halogen Free
    NPN - Pre-Biased
    50V
    100mA
    80 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    250mV
    -
    80
    47 k Ω
    47 k Ω
    1.01mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    Tin (Sn)
    -
    -
    SMMUN2214LT1G vs SMMUN2213LT3G
  • SMMUN2211LT1G
    SMMUN2211LT1G
    ON Semiconductor
    ACTIVE (Last Updated: 5 days ago)
    4 Weeks
    Tin
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    Tape & Reel (TR)
    2013
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    150°C
    -55°C
    BUILT IN BIAS RESISTOR RATIO IS 1
    BIP General Purpose Small Signal
    246mW
    DUAL
    GULL WING
    MMUN22**L
    3
    AEC-Q101
    1
    NPN
    Single
    SWITCHING
    Halogen Free
    NPN - Pre-Biased
    50V
    100mA
    35 @ 5mA 10V
    500nA
    250mV @ 300μA, 10mA
    50V
    250mV
    50V
    35
    10 k Ω
    10 k Ω
    1.01mm
    3.04mm
    1.4mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    50V
    SMMUN2214LT1G vs SMMUN2211LT1G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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