Vishay Siliconix SIC632CD-T1-GE3

Description
The SiC632 and SiC632A are integrated power stage solutions optimized for synchronous buck applications. Packaged in Vishay's proprietary 5 mm x 5 mm MLP package, they enable voltage regulator designs to deliver up to 50 A continuous current per phase. The internal power MOSFETs utilize Vishay's Gen IV TrenchFET technology, which reduces switching and conduction losses. The devices incorporate an advanced MOSFET gate driver IC with high current driving capability, adaptive dead-time control, an integrated bootstrap Schottky diode, a thermal warning (THWn), and zero current detection for improved light load efficiency. The drivers are compatible with a wide range of PWM controllers and support tri-state PWM, 3.3 V (SIC632A), and 5 V (SIC632) PWM logic.

Features
Thermally enhanced PowerPAK MLP55-31L package
Vishay's Gen IV MOSFET technology and a low-side MOSFET with integrated Schottky diode
Delivers up to 50 A continuous current
High efficiency performance
High frequency operation up to 1.5 MHz
Power MOSFETs optimized for 19 V input stage
3.3 V (SIC632A), 5 V (SIC632) PWM logic with tri-state and hold-off
Zero current detect control for light load efficiency improvement
Low PWM propagation delay (< 20 ns)
Faster disable
Thermal monitor flag
Undervoltage lockout for VCIN

Applications
Multi-phase VRDS for computing, graphics cards, and memory
Intel IMVP-8 VRPower delivery: VCORE, VGRAPHICS, VSYSTEM AGENT (Skylake, Kabylake platforms)
VCCGI for Apollo Lake platforms
Up to 24 V rail input DC/DC VR modules