Vishay Siliconix SI5403DC-T1-GE3
- Part Number:
- SI5403DC-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3554260-SI5403DC-T1-GE3
- Description:
- MOSFET P-CH 30V 6A 1206-8
- Datasheet:
- SI5403DC-T1-GE3
Vishay Siliconix SI5403DC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5403DC-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Flat Lead
- Number of Pins8
- Weight84.99187mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2015
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance30mOhm
- Terminal FinishMATTE TIN
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Number of Channels1
- Power Dissipation-Max2.5W Ta 6.3W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time50 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs30m Ω @ 7.2A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1340pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time140ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)18 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)6A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- DS Breakdown Voltage-Min30V
- Height1.1mm
- Length3.05mm
- Width1.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI5403DC-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1340pF @ 15V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -3V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI5403DC-T1-GE3 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 30 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
SI5403DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5403DC-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1340pF @ 15V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -3V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI5403DC-T1-GE3 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 30 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)
SI5403DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5403DC-T1-GE3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI5403DC-T1-GE3 More Descriptions
P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SMD-8
P Channel Mosfet, -30V, 6A, 1206, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20Vrohs Compliant: No
MOSFET, P-CH, -30V, 6A, CHIFFET; Transistor Polarity: P Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 6.3W; Transistor Case Style: ChipFET; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
P Channel Mosfet, -30V, 6A, 1206, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20Vrohs Compliant: No
MOSFET, P-CH, -30V, 6A, CHIFFET; Transistor Polarity: P Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 6.3W; Transistor Case Style: ChipFET; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
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