SI5403DC-T1-GE3

Vishay Siliconix SI5403DC-T1-GE3

Part Number:
SI5403DC-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
3554260-SI5403DC-T1-GE3
Description:
MOSFET P-CH 30V 6A 1206-8
ECAD Model:
Datasheet:
SI5403DC-T1-GE3

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Specifications
Vishay Siliconix SI5403DC-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI5403DC-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SMD, Flat Lead
  • Number of Pins
    8
  • Weight
    84.99187mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    30mOhm
  • Terminal Finish
    MATTE TIN
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    8
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta 6.3W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    50 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    30m Ω @ 7.2A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1340pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Rise Time
    140ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    18 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    6A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    6A
  • DS Breakdown Voltage-Min
    30V
  • Height
    1.1mm
  • Length
    3.05mm
  • Width
    1.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI5403DC-T1-GE3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1340pF @ 15V.This device has a continuous drain current (ID) of [6A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 6A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 30 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 50 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -3V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI5403DC-T1-GE3 Features
a continuous drain current (ID) of 6A
the turn-off delay time is 30 ns
a threshold voltage of -3V
a 30V drain to source voltage (Vdss)


SI5403DC-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI5403DC-T1-GE3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI5403DC-T1-GE3 More Descriptions
P-Channel 30 V 0.03 Ohms Surface Mount Power Mosfet - SMD-8
P Channel Mosfet, -30V, 6A, 1206, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6A; On Resistance Rds(On):0.044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:20Vrohs Compliant: No
MOSFET, P-CH, -30V, 6A, CHIFFET; Transistor Polarity: P Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 6.3W; Transistor Case Style: ChipFET; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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