Vishay Siliconix SI4488DY-T1-GE3

Name: SI4488DY-T1-GE3
Brand: Vishay Siliconix
SKU: 2480270-SI4488DY-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4488DY-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2480270-SI4488DY-T1-GE3

Description:: MOSFET N-CH 150V 3.5A 8-SOIC

ECAD Model:

Datasheet:: SI4488DY-T1-GE3

Specifications

Vishay Siliconix SI4488DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI4488DY-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Weight
506.605978mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.56W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.56W
Turn On Delay Time
12 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
50m Ω @ 5A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C
3.5A Ta
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
22 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.05Ohm
Drain to Source Breakdown Voltage
150V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI4488DY-T1-GE3 Overview
This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 22 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (10V).

SI4488DY-T1-GE3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2V

SI4488DY-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI4488DY-T1-GE3 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

SI4488DY-T1-GE3 More Descriptions

Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
MOSFET,N CH,DIODE,150V,5A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.041ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:5A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to SI4488DY-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

REACH SVHC

Radiation Hardening

RoHS Status

Surface Mount

Number of Terminals

JESD-30 Code

Qualification Status

Configuration

Transistor Application

Polarity/Channel Type

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

FET Technology

region:

Shipment :

Packaging:

Distributor:

Contact Email:

Condition:

Operating Temperature (Max)

Power Dissipation-Max (Abs)

View Compare
SI4488DY-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

506.605978mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

e3

yes

Active

1 (Unlimited)

8

EAR99

MATTE TIN

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

8

1

1

1.56W Ta

Single

ENHANCEMENT MODE

1.56W

12 ns

N-Channel

50m Ω @ 5A, 10V

2V @ 250μA (Min)

3.5A Ta

36nC @ 10V

7ns

10V

±20V

10 ns

22 ns

5A

2V

20V

0.05Ohm

150V

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI4435BDY-T1-GE3

VISHAY

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-

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-

SILICON

-

-

-

-

-

-

-

-

-

EAR99

-

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-

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

8

1

-

-

-

ENHANCEMENT MODE

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

0.02Ohm

-

-

-

RoHS Compliant

YES

8

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

SWITCHING

P-CHANNEL

7A

30V

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

-

-

SI4488DY-T1-GE3 vs SI4435BDY-T1-GE3
SI4401DY-T1

VISHAY

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hk

DHL

SOP8

Ventron

sales@ventronchip.com

New

-

-

SI4488DY-T1-GE3 vs SI4401DY-T1
SI4466DY

VISHAY

-

-

-

-

-

-

-

-

-

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-

e0

-

-

-

-

-

Tin/Lead (Sn/Pb)

FET General Purpose Power

-

-

-

-

-

8

-

-

-

-

ENHANCEMENT MODE

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

-

-

-

-

Non-RoHS Compliant

YES

-

-

-

Single

-

N-CHANNEL

13.2A

-

METAL-OXIDE SEMICONDUCTOR

-

-

-

-

-

-

150°C

2.5W

SI4488DY-T1-GE3 vs SI4466DY

Certification

Related parts for SI4488DY-T1-GE3

SI4435BDY-T1-E3.

VISHAY
SI4470EY

N/A
SI4435BDY-T1-GE3

VISHAY
SI4403BDY

N/A
SI4401DY-T1

VISHAY

in stock
SI4435DY-T1

SILICONIX

ORIGINAL IN STOCK
SI4435BDY-T1-E3

VISHAY-Pb

ORIGINAL IN STOCK
SI4490DY-T

VISHAY

ORIGINAL IN STOCK
SI4485DY-T1-GE3

VISHAY

ORIGINAL IN STOCK
SI4466DY

VISHAY

ORIGINAL IN STOCK

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SI4488DY-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R RoHS: Compliant	2972	1 $1.9008 10 $1.6375 25 $1.5285 100 $1.3159 250 $1.2707 500 $1.1554 1000 $0.9829
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 3.5A 8-SOIC RoHS: Compliant	2160	1 $2.1 10 $1.9 100 $1.5268 500 $1.18748 1000 $0.98391
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 3.5A 8-SOIC RoHS: Compliant	2160	1 $2.1 10 $1.9 100 $1.5268 500 $1.18748 1000 $0.98391
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Siliconix	MOSFET N-CH 150V 3.5A 8-SOIC RoHS: Compliant	0	2500 $0.88937
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R RoHS: Compliant	2972	7 $1.9008 10 $1.6375 25 $1.5286 100 $1.3159 250 $1.2707 500 $1.1554 1000 $0.9829
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R RoHS: Compliant	2500	2500 $0.8926
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R - Tap RoHS: Not Compliant	0	2500 $0.5769 5000 $0.5599 10000 $0.5369 15000 $0.5219 25000 $0.5079
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	N CH MOSFET, Transistor Polarity:N Channel, Cont	0	1 $1.43 1000 $1.35 2000 $1.28 4000 $1.15 6000 $1.11 10000 $1.07
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	MOSFET Transistor, N Channel, 5 A, 150 V, 0.041 oh	2229	1 $2.32 10 $1.93 25 $1.79 50 $1.64 100 $1.5 250 $1.41 500 $1.31
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	MOSFET 150V Vds 20V Vgs SO-8 RoHS: Compliant	1460	1 $2.32 10 $1.93 100 $1.5 500 $1.31 1000 $1.09 2500 $1.01
SI4488DYT1GE3 DISTI #SI4488DYT1GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.5A I(D), 1 RoHS: Compliant	2500
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	MOSFET,N CH,DIODE,150V,5A,8-SOIC RoHS: Compliant	0	1 $3.35 10 $3.03 100 $2.44 500 $1.9 1000 $1.57
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	MOSFET,N CH,DIODE,150V,5A,8-SOIC RoHS: Compliant	2229	1 $3.35 10 $3.03 100 $2.44 500 $1.9 1000 $1.57
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	MOSFETs	2972	10 $1.6375 25 $1.5286 100 $1.3159 250 $1.2707
SI4488DY-T1-GE3 DISTI #SI4488DY-T1-GE3	Vishay Intertechnologies	MOSFET,N CH,DIODE,150V,5A,8-SOIC RoHS: Compliant	2474	5 $1.61 25 $1.49 100 $1.15 250 $1.04 500 $0.938

SI4488D~~(4)~~
SI4488~~(4)~~
SI448~~(43)~~
SI44~~(200)~~
SI4~~(201)~~

Vishay Siliconix SI4488DY-T1-GE3

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