SI3552DV-T1-E3

VISHAY SI3552DV-T1-E3

Part Number:
SI3552DV-T1-E3
Manufacturer:
VISHAY
Ventron No:
5556784-SI3552DV-T1-E3
Description:
passive components in stock
ECAD Model:
Datasheet:
SI3552DV-T1-E3

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Description
part No. SI3552DV-T1-E3 Is this available? : YesShipped from : HK warehouseSame model may have different manufacturers, images only for reference.
SI3552DV-T1-E3 More Descriptions
MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6 | Siliconix / Vishay SI3552DV-T1-E3
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R / MOSFET N/P-CH 30V 6TSOP
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
DUAL N/P CHANNEL MOSFET, 30V, TSOP; Tran; DUAL N/P CHANNEL MOSFET, 30V, TSOP; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:2.5A; Continuous Drain Current Id, P Channel:-1.8A; Drain Source Voltage Vds, N Channel:30V
MOSFET, N & P-CH, 30V, 2.5A, TSOP; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.085ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 1.15W; Transistor Case Style: TSOP; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
SI3552DV-T1-E3 Detail Images
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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