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SF4006-TAP

Vishay Semiconductor Diodes Division SF4006-TAP

Part Number:
SF4006-TAP
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2427792-SF4006-TAP
Description:
DIODE AVAL 1A 800V SOD-57
ECAD Model:
Datasheet:
SF4006-TAP

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Specifications
Vishay Semiconductor Diodes Division SF4006-TAP technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division SF4006-TAP.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    SOD-57, Axial
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Box (TB)
  • Published
    2017
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver (Sn96.5Ag3.5)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    E-LALF-W2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Avalanche
  • Current - Reverse Leakage @ Vr
    5μA @ 800V
  • Voltage - Forward (Vf) (Max) @ If
    1.7V @ 1A
  • Case Connection
    ISOLATED
  • Forward Current
    1A
  • Operating Temperature - Junction
    -55°C~175°C
  • Max Surge Current
    30A
  • Output Current-Max
    1A
  • Max Reverse Voltage (DC)
    800V
  • Average Rectified Current
    1A
  • Reverse Recovery Time
    75 ns
  • Peak Reverse Current
    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    800V
  • Peak Non-Repetitive Surge Current
    30A
  • Reverse Voltage
    800V
  • Recovery Time
    75 ns
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SF4006-TAP Overview
An acceptable reverse voltage would be 800V.As a result, this device has a rectified current of 1A volts on average.Phase diode rectifier is permissible for forward current to reach 1A.Fuse elements have an indefinite life expectancy of 1A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 30A surge current.Using the output current as an example, 1A is the maximum value.Based on the data charts in the datasheets, the peak reverse is 5μA.

SF4006-TAP Features
an average rectified current of 1A volts
a current rating of 1A
1A is the maximum value
the peak reverse is 5μA


SF4006-TAP Applications
There are a lot of Vishay Semiconductor Diodes Division
SF4006-TAP applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
SF4006-TAP More Descriptions
Diode Switching 800V 1A 2-Pin SOD-57 Ammo
SUPER FAST DIODE, 1A, 800V, SOD-57AVALANCHE DIODE SOD57 STD
DIODE AVAL 1A 800V SOD-57
Product Comparison
The three parts on the right have similar specifications to SF4006-TAP.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    HTS Code
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Output Current-Max
    Max Reverse Voltage (DC)
    Average Rectified Current
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Recovery Time
    Radiation Hardening
    RoHS Status
    Number of Pins
    Forward Voltage
    Capacitance @ Vr, F
    View Compare
  • SF4006-TAP
    SF4006-TAP
    Vishay Semiconductor Diodes Division
    12 Weeks
    Through Hole
    Through Hole
    SOD-57, Axial
    SILICON
    Tape & Box (TB)
    2017
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    1A
    30
    E-LALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 800V
    1.7V @ 1A
    ISOLATED
    1A
    -55°C~175°C
    30A
    1A
    800V
    1A
    75 ns
    5μA
    800V
    30A
    800V
    75 ns
    No
    ROHS3 Compliant
    -
    -
    -
    -
  • SF4003-TAP
    SF4003-TAP
    Vishay Semiconductor Diodes Division
    12 Weeks
    Through Hole
    Through Hole
    SOD-57, Axial
    SILICON
    Tape & Box (TB)
    2017
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    -
    30
    E-LALF-W2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 200V
    1V @ 1A
    ISOLATED
    1A
    -55°C~175°C
    30A
    1A
    200V
    1A
    50 ns
    5μA
    200V
    30A
    200V
    50 ns
    No
    ROHS3 Compliant
    -
    -
    -
    SF4006-TAP vs SF4003-TAP
  • SF4001-TR
    SF4001-TR
    Vishay Semiconductor Diodes Division
    12 Weeks
    Through Hole
    Through Hole
    SOD-57, Axial
    SILICON
    Tape & Reel (TR)
    2006
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    1A
    30
    -
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 50V
    1V @ 1A
    ISOLATED
    1A
    -55°C~175°C
    30A
    1A
    50V
    1A
    50 ns
    5μA
    50V
    30A
    50V
    50 ns
    No
    ROHS3 Compliant
    2
    1V
    76pF @ 4V 1MHz
    SF4006-TAP vs SF4001-TR
  • SF4004-TR
    SF4004-TR
    Vishay Semiconductor Diodes Division
    12 Weeks
    Through Hole
    Through Hole
    SOD-57, Axial
    SILICON
    Tape & Reel (TR)
    2006
    e2
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    Tin/Silver (Sn96.5Ag3.5)
    175°C
    -55°C
    8541.10.00.80
    Rectifier Diodes
    WIRE
    260
    1A
    30
    -
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Avalanche
    5μA @ 400V
    1V @ 1A
    ISOLATED
    1A
    -55°C~175°C
    30A
    1A
    400V
    1A
    50 ns
    5μA
    400V
    30A
    400V
    50 ns
    No
    ROHS3 Compliant
    2
    1V
    76pF @ 4V 1MHz
    SF4006-TAP vs SF4004-TR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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