Vishay Semiconductor Diodes Division S4PMHM3/86A
- Part Number:
- S4PMHM3/86A
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 3582308-S4PMHM3/86A
- Description:
- DIODE GEN PURP 1KV 4A TO277A
- ECAD Model:
-
- Datasheet:
- S4PMHM3/86A
Vishay Semiconductor Diodes Division S4PMHM3/86A technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division S4PMHM3/86A.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-277, 3-PowerDFN
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- SerieseSMP®
- Published2015
- JESD-609 Codee3
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureFREE WHEELING DIODE
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberS4PM
- Pin Count3
- Reference StandardAEC-Q101
- Number of Elements1
- Element ConfigurationCommon Anode
- SpeedStandard Recovery >500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr10μA @ 1000V
- Voltage - Forward (Vf) (Max) @ If1.1V @ 4A
- Case ConnectionCATHODE
- Forward Current4A
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current100A
- Output Current-Max4A
- ApplicationGENERAL PURPOSE
- Voltage - DC Reverse (Vr) (Max)1000V
- Forward Voltage1.1V
- Max Reverse Voltage (DC)1kV
- Average Rectified Current4A
- Number of Phases1
- Reverse Recovery Time2.5 μs
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)1kV
- JEDEC-95 CodeTO-277A
- Capacitance @ Vr, F30pF @ 4V 1MHz
- Peak Non-Repetitive Surge Current100A
- Reverse Voltage1kV
- Recovery Time2.5 μs
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
S4PMHM3/86A Overview
A reverse voltage of 1kV is reasonable.This device has an average rectified current of 4A volts.Forward current is allowed to reach a value of zero.Surge currents can be used up to 100A.The maximum output current is 4A.Datasheets indicate that the peak reverse is 10μA.
S4PMHM3/86A Features
an average rectified current of 4A volts
4A is the maximum value
the peak reverse is 10μA
S4PMHM3/86A Applications
There are a lot of Vishay Semiconductor Diodes Division
S4PMHM3/86A applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
A reverse voltage of 1kV is reasonable.This device has an average rectified current of 4A volts.Forward current is allowed to reach a value of zero.Surge currents can be used up to 100A.The maximum output current is 4A.Datasheets indicate that the peak reverse is 10μA.
S4PMHM3/86A Features
an average rectified current of 4A volts
4A is the maximum value
the peak reverse is 10μA
S4PMHM3/86A Applications
There are a lot of Vishay Semiconductor Diodes Division
S4PMHM3/86A applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
S4PMHM3/86A More Descriptions
Diode Switching 1KV 4A 3-Pin SMPC T/R
DIODE GP 1000V 4A TO277A
DIODE GPP 4A 1000V SMPC
Compliant Surface Mount 2.5 µs 3 4 A 1.1 V 1 kV 100 A
DIODE GEN PURP 1KV 4A TO277A
DIODE GP 1000V 4A TO277A
DIODE GPP 4A 1000V SMPC
Compliant Surface Mount 2.5 µs 3 4 A 1.1 V 1 kV 100 A
DIODE GEN PURP 1KV 4A TO277A
The three parts on the right have similar specifications to S4PMHM3/86A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfCase ConnectionForward CurrentOperating Temperature - JunctionMax Surge CurrentOutput Current-MaxApplicationVoltage - DC Reverse (Vr) (Max)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesReverse Recovery TimePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)JEDEC-95 CodeCapacitance @ Vr, FPeak Non-Repetitive Surge CurrentReverse VoltageRecovery TimeRadiation HardeningRoHS StatusFactory Lead TimeReach Compliance CodeJESD-30 CodeOperating Temperature (Max)ConfigurationNon-rep Pk Forward Current-MaxReverse Current-MaxMax Forward Surge Current (Ifsm)HeightLengthWidthREACH SVHCLead FreeView Compare
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S4PMHM3/86ASurface MountSurface MountTO-277, 3-PowerDFN3SILICONTape & Reel (TR)eSMP®2015e3Discontinued1 (Unlimited)3EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE8541.10.00.80Rectifier DiodesDUALFLAT26030S4PM3AEC-Q1011Common AnodeStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 1000V1.1V @ 4ACATHODE4A-55°C~150°C100A4AGENERAL PURPOSE1000V1.1V1kV4A12.5 μs10μA1kVTO-277A30pF @ 4V 1MHz100A1kV2.5 μsNoROHS3 Compliant-------------- -
Surface MountSurface MountTO-277, 3-PowerDFN3SILICONTape & Reel (TR)eSMP®2015e3Discontinued1 (Unlimited)3EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE8541.10.00.80Rectifier DiodesDUALFLAT26030S4PM3AEC-Q1011Common AnodeStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 1000V1.1V @ 4ACATHODE4A-55°C~150°C100A4AGENERAL PURPOSE1000V-1kV4A12.5 μs10μA1kVTO-277A30pF @ 4V 1MHz100A1kV2.5 μsNoROHS3 Compliant-------------
-
Surface MountSurface MountTO-277, 3-PowerDFN-SILICONTape & Reel (TR)Automotive, AEC-Q101, eSMP®2017e3Active1 (Unlimited)3EAR99Matte Tin (Sn)--FREE WHEELING DIODE8541.10.00.80-DUALFLAT26030---1-Standard Recovery >500ns, > 200mA (Io)Standard10μA @ 1000V1.1V @ 4ACATHODE--55°C~150°C-4AGENERAL PURPOSE1000V-1kV4A12.5 μs--TO-277A30pF @ 4V 1MHz----ROHS3 Compliant10 Weeksnot_compliantR-PDSO-F3150°CSINGLE100A10μA------
-
Surface MountSurface MountTO-277, 3-PowerDFN3SILICONTape & Reel (TR)eSMP®2010e3Active1 (Unlimited)3EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE8541.10.00.80Rectifier DiodesDUALFLAT26030S4PM3-1Common AnodeStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 1000V1.1V @ 4ACATHODE4A-55°C~150°C100A4AGENERAL PURPOSE1000V1.1V1kV4A12.5 μs10μA1kVTO-277A30pF @ 4V 1MHz100A1kV2.5 μsNoROHS3 Compliant10 Weeks------100A1.2mm4.35mm6.15mmUnknownLead Free
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