Cypress Semiconductor Corp S25FL256SAGMFB010

S25FL256SAGMFB010 Overview
The number of terminations for this particular product is 16, which is a moderate amount compared to other electronic components. The supply voltage required for optimal functioning is 3V, which is a relatively low voltage. The reflow temperature, however, is not specified, which may cause some concern for potential users. The JESD-30 code for this product is R-PDSO-G16, indicating a rectangular package with a power dissipation of 1.5W and a thermal resistance of 62°C/W. The maximum supply voltage for this product is 3.6V, which is slightly higher than the required voltage. The organization of this component is 64MX4, meaning it has 64 million cells with 4 bits per cell. The programming voltage for this product is 3V, which is consistent with the required supply voltage. The maximum write cycle time is 500ms, which is relatively slow compared to other memory devices. Additionally, this component has an alternate memory width of 2, indicating that it can support multiple data widths. Finally, the maximum seated height for this product is 2.65mm, which is relatively thin and compact. Overall, this component has a moderate number of terminations and a low supply voltage, but some specifications such as reflow temperature and write cycle time are not specified.

S25FL256SAGMFB010 Features
Package / Case: 16-SOIC (0.295, 7.50mm Width)
Additional Feature:ALSO CONFIGURABLE AS 256M X 1

S25FL256SAGMFB010 Applications
There are a lot of Cypress Semiconductor Corp S25FL256SAGMFB010 Memory applications.

eDRAM
cell phones
networks
graphics card
main computer memory
servers
mainframes
supercomputers
multimedia computers
personal computers