Toshiba Semiconductor and Storage RN1402S,LF
- Part Number:
- RN1402S,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Ventron No:
- 2472892-RN1402S,LF
- Description:
- TRANS PREBIAS NPN 0.2W S-MINI
- ECAD Model:
-
- Datasheet:
- RN1402S,LF
Toshiba Semiconductor and Storage RN1402S,LF technical specifications, attributes, parameters and parts with similar specifications to Toshiba Semiconductor and Storage RN1402S,LF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins59
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2014
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureBUILT IN BIAS RESISTANCE RATIO IS 1
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- Base Part NumberRN140*
- JESD-30 CodeR-PDSO-G3
- Number of Elements1
- PolarityNPN
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Transistor TypeNPN - Pre-Biased
- Collector Emitter Voltage (VCEO)300mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency250MHz
- Max Breakdown Voltage50V
- Frequency - Transition250MHz
- Resistor - Base (R1)10 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)10 k Ω
- RoHS StatusRoHS Compliant
RN1402S,LF Overview
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1402S,LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1402S,LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Toshiba Semiconductor and Storage and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet RN1402S,LF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RN1402S,LF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RN1402S,LF More Descriptions
X34 PB-F SOT-23 PLN (LF) TRANSISTOR PD=200MW F=250MHZ
TRANS PREBIAS NPN 0.2W S-MINI
TRANS PREBIAS NPN 50V 0.1A SMINI
IC REG CTRLR BUCK 16QSOP
TRANS PREBIAS NPN 0.2W S-MINI
TRANS PREBIAS NPN 50V 0.1A SMINI
IC REG CTRLR BUCK 16QSOP
The three parts on the right have similar specifications to RN1402S,LF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialPackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureMax Power DissipationTerminal PositionTerminal FormReach Compliance CodeBase Part NumberJESD-30 CodeNumber of ElementsPolarityConfigurationPower DissipationTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyMax Breakdown VoltageFrequency - TransitionResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)RoHS StatusFactory Lead TimeMax Operating TemperatureMin Operating TemperatureElement ConfigurationRadiation HardeningPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)View Compare
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RN1402S,LFSurface MountSurface MountTO-236-3, SC-59, SOT-23-359SILICONTape & Reel (TR)2014Obsolete1 (Unlimited)3BUILT IN BIAS RESISTANCE RATIO IS 1200mWDUALGULL WINGunknownRN140*R-PDSO-G31NPNSINGLE WITH BUILT-IN RESISTOR200mWSWITCHINGNPN - Pre-Biased300mV100mA50 @ 10mA 5V500nA300mV @ 250μA, 5mA50V250MHz50V250MHz10 k Ω100mA10 k ΩRoHS Compliant--------- -
Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-Tape & Reel (TR)2010Active1 (Unlimited)--200mW---RN142*--NPN---NPN - Pre-Biased50V800mA90 @ 100mA 1V500nA250mV @ 1mA, 50mA50V--300MHz1 k Ω-10 k ΩRoHS Compliant12 Weeks150°C-55°CSingleNo---
-
Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-Tape & Reel (TR)2010Active1 (Unlimited)--200mW---RN142*--NPN---NPN - Pre-Biased50V800mA90 @ 100mA 1V500nA250mV @ 1mA, 50mA50V--300MHz10 k Ω-10 k ΩRoHS Compliant12 Weeks150°C-55°CSingleNo---
-
-Surface MountTO-236-3, SC-59, SOT-23-3--Tape & Reel (TR)2010Active1 (Unlimited)-----unknownRN142*------NPN - Pre-Biased--90 @ 100mA 1V500nA250mV @ 1mA, 50mA---300MHz2.2 k Ω-10 k ΩRoHS Compliant12 Weeks----200mW50V800mA
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