RN1302SU,LF(D

Part Number:: RN1302SU,LF(D

Manufacturer:

Ventron No:: 2473145-RN1302SU,LF(D

Description:: TRANS PREBIAS NPN 0.1W USM

ECAD Model:

Datasheet:: RN1302SU,LF(D

Description

The RN1302SU,LF(D is TRANS PREBIAS NPN 0.1W USM , it is part of series. they are designed to work as Transistors - Bipolar (BJT) - Single, Pre-Biased.RN1302SU,LF(D with pin details manufactured by Toshiba Semiconductor and Storage. The RN1302SU,LF(D is available in Package,it is part of the electronic component Chips.that includes Series. they are designed to operate as Transistors - Bipolar (BJT) - Single, Pre-Biased.it is with Operating Temperature .RN1302SU,LF(D with original stock manufactured by Toshiba Semiconductor and Storage. The RN1302SU,LF(D is available in Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of RN1302SU,LF(Dis designed to work in , it's Operating Temperature is .The RN1302SU,LF(D is available in Package, is part of the Transistors - Bipolar (BJT) - Single, Pre-Biased and belong to Discrete Semiconductor Products.RN1302SU,LF(D with EDA / CAD Models manufactured by Toshiba Semiconductor and Storage. The RN1302SU,LF(D is available in Package, is part of the Discrete Semiconductor Products.The RN1302SU,LF(D is Transistors - Bipolar (BJT) - Single, Pre-Biased with package manufactured by Toshiba Semiconductor and Storage. The RN1302SU,LF(D is available in Package, is part of the TRANS PREBIAS NPN 0.1W USM.

RN1302SU,LF(D More Descriptions

TRANS PREBIAS NPN 0.1W USM

Product Comparison

The three parts on the right have similar specifications to RN1302SU,LF(D.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Max Power Dissipation

Polarity

Element Configuration

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Max Breakdown Voltage

Frequency - Transition

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Resistor - Base (R1)

Continuous Collector Current

Resistor - Emitter Base (R2)

Height

Length

Width

RoHS Status

Base Part Number

Power Dissipation

Radiation Hardening

Supplier Device Package

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
RN1302SU,LF(D

-

-

-

-

-

-

-

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-

-

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-

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-

-

-

-

-

-

-

-

-

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-

-

-

-

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RN1305,LF

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

28.009329mg

Cut Tape (CT)

2014

Active

1 (Unlimited)

150°C

-55°C

100mW

NPN

Single

NPN - Pre-Biased

50V

100mA

80 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

50V

50V

250MHz

50V

5V

80

2.2 k Ω

100mA

47 k Ω

900μm

2mm

1.25mm

RoHS Compliant

-

-

-

-

-

-

-

RN1302SU,LF(D vs RN1305,LF
RN1313(TE85L,F)

Toshiba Semiconductor and Storage

11 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

-

Tape & Reel (TR)

2009

Active

1 (Unlimited)

125°C

-55°C

150mW

NPN

Single

NPN - Pre-Biased

50V

100mA

120 @ 1mA 5V

100nA ICBO

300mV @ 250μA, 5mA

50V

50V

250MHz

-

-

120

47 k Ω

100mA

-

-

-

-

RoHS Compliant

RN131*

100mW

No

-

-

-

-

RN1302SU,LF(D vs RN1313(TE85L,F)
RN1302,LF

Toshiba Semiconductor and Storage

12 Weeks

Surface Mount

Surface Mount

SC-70, SOT-323

3

28.009329mg

Cut Tape (CT)

2014

Discontinued

1 (Unlimited)

150°C

-55°C

100mW

NPN

Single

NPN - Pre-Biased

50V

100mA

50 @ 10mA 5V

500nA

300mV @ 250μA, 5mA

50V

50V

250MHz

50V

10V

50

10 kOhms

100mA

10 kOhms

900μm

2mm

1.25mm

RoHS Compliant

-

-

-

USM

100mW

50V

100mA

RN1302SU,LF(D vs RN1302,LF