Fairchild/ON Semiconductor RHRG75120
- Part Number:
- RHRG75120
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2422008-RHRG75120
- Description:
- DIODE GEN PURP 1.2KV 75A TO247
- Datasheet:
- RHRG75120
Fairchild/ON Semiconductor RHRG75120 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RHRG75120.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time9 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-2
- Number of Pins2
- Weight6.33g
- Diode Element MaterialSILICON
- PackagingTube
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature175°C
- Min Operating Temperature-65°C
- Additional FeatureFREE WHEELING DIODE
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Voltage - Rated DC1.2kV
- TechnologyAVALANCHE
- Current Rating75A
- Number of Elements1
- Element ConfigurationSingle
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr250μA @ 1200V
- Power Dissipation190W
- Output Current75A
- Voltage - Forward (Vf) (Max) @ If3.2V @ 75A
- Case ConnectionCATHODE
- Forward Current75A
- Operating Temperature - Junction-65°C~175°C
- Max Surge Current500A
- ApplicationHYPERFAST SOFT RECOVERY
- Voltage - DC Reverse (Vr) (Max)1200V
- Forward Voltage3.2V
- Max Reverse Voltage (DC)1.2kV
- Average Rectified Current75A
- Number of Phases1
- Reverse Recovery Time100 ns
- Peak Reverse Current250μA
- Max Repetitive Reverse Voltage (Vrrm)1.2kV
- Peak Non-Repetitive Surge Current500A
- Reverse Voltage1.2kV
- Max Forward Surge Current (Ifsm)500A
- Recovery Time100 ns
- Max Junction Temperature (Tj)175°C
- Height24.75mm
- Length15.8mm
- Width4.82mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
RHRG75120 Overview
There is no reason to reverse the voltage at 1.2kV.Devices like this have an average rectified current of 75A volts.In the course of its primary operation, this electronic or electrical device produces 190W heat.There is no limit to the forward current value.Having a current rating of 75A means it can carry the maximum current an indefinite period without deterioration.Surge current can reach maximum value 500A.On the data sheets, the peak reverse is indicated by the data chart as 250μA.
RHRG75120 Features
an average rectified current of 75A volts
a current rating of 75A
the peak reverse is 250μA
RHRG75120 Applications
There are a lot of ON Semiconductor
RHRG75120 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
There is no reason to reverse the voltage at 1.2kV.Devices like this have an average rectified current of 75A volts.In the course of its primary operation, this electronic or electrical device produces 190W heat.There is no limit to the forward current value.Having a current rating of 75A means it can carry the maximum current an indefinite period without deterioration.Surge current can reach maximum value 500A.On the data sheets, the peak reverse is indicated by the data chart as 250μA.
RHRG75120 Features
an average rectified current of 75A volts
a current rating of 75A
the peak reverse is 250μA
RHRG75120 Applications
There are a lot of ON Semiconductor
RHRG75120 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
RHRG75120 More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 75A, 1200V V(RRM), Silicon, TO-247
DIODE GEN PURP 1.2KV 75A TO247 / Rectifier Diode Switching 1.2KV 75A 100ns 2-Pin(2 Tab) TO-247 Tube
RHRG75120 Series 75 A 1200 V Max Reverse Voltage Hyperfast Diode - TO-247-2
DIODE, HYPERFAST; Diode Type:Soft Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):75A; Forward Voltage VF Max:3.2V; Reverse Recovery Time trr Max:85ns; Forward Surge Current Ifsm Max:500A; Diode Case Style:TO-247; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifsm:500A; Forward Voltage:3.2V; Junction Temperature Tj Max:175°C; Package / Case:TO-247; Termination Type:Through Hole
The RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
DIODE GEN PURP 1.2KV 75A TO247 / Rectifier Diode Switching 1.2KV 75A 100ns 2-Pin(2 Tab) TO-247 Tube
RHRG75120 Series 75 A 1200 V Max Reverse Voltage Hyperfast Diode - TO-247-2
DIODE, HYPERFAST; Diode Type:Soft Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:1.2kV; Forward Current If(AV):75A; Forward Voltage VF Max:3.2V; Reverse Recovery Time trr Max:85ns; Forward Surge Current Ifsm Max:500A; Diode Case Style:TO-247; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ifsm:500A; Forward Voltage:3.2V; Junction Temperature Tj Max:175°C; Package / Case:TO-247; Termination Type:Through Hole
The RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
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