RHRD660S9A

Fairchild/ON Semiconductor RHRD660S9A

Part Number:
RHRD660S9A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2421557-RHRD660S9A
Description:
DIODE GEN PURP 600V 6A TO252-3
ECAD Model:
Datasheet:
RHRD660S9A

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Specifications
Fairchild/ON Semiconductor RHRD660S9A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RHRD660S9A.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Number of Pins
    3
  • Weight
    260.37mg
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREEWHEELING DIODE
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Voltage - Rated DC
    600V
  • Technology
    AVALANCHE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Current Rating
    6A
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    RHRD660S9
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    100μA @ 600V
  • Power Dissipation
    50W
  • Output Current
    6A
  • Voltage - Forward (Vf) (Max) @ If
    2.1V @ 6A
  • Case Connection
    CATHODE
  • Forward Current
    6A
  • Operating Temperature - Junction
    -55°C~175°C
  • Max Surge Current
    60A
  • Application
    HYPERFAST SOFT RECOVERY
  • Forward Voltage
    2.1V
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    6A
  • Number of Phases
    1
  • Reverse Recovery Time
    35 ns
  • Peak Reverse Current
    100μA
  • Max Repetitive Reverse Voltage (Vrrm)
    600V
  • Peak Non-Repetitive Surge Current
    60A
  • Reverse Voltage
    600V
  • Max Forward Surge Current (Ifsm)
    60A
  • Recovery Time
    30 ns
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
RHRD660S9A Overview
The reverse voltage should be 600V.In this device, there is an average rectified current of 6A volts.An unwanted consequence of the primary action of this electronic or electrical device is the production of 50W heat.Forward current may not exceed 6A.6A is its maximum current rating, which is the maximum current that a fuse can handle without deteriorating.This is the maximum amount of 60A surge current that can be used.As the data chart indicates, the peak reverse is 100μA.

RHRD660S9A Features
an average rectified current of 6A volts
a current rating of 6A
the peak reverse is 100μA


RHRD660S9A Applications
There are a lot of ON Semiconductor
RHRD660S9A applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
RHRD660S9A More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252
Rectifier Diode Switching 600V 6A 35ns 3-Pin(2 Tab) DPAK T/R
DIODE, RECTIFIER, 6A, 600V, TO-252; Diode Type:Ultrafast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):6A; Forward Voltage VF Max:2.1V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to 175°C; Diode Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2011)
The RHRD660S is a hyperfast diodes with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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