Fairchild/ON Semiconductor QSE113
- Part Number:
- QSE113
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 4446359-QSE113
- Description:
- IC PHOTOTRANS IR 880NM SIDE-LOOK
- ECAD Model:
-
- Datasheet:
- QSE113
Fairchild/ON Semiconductor QSE113 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor QSE113.
- Lifecycle StatusACTIVE (Last Updated: 18 hours ago)
- Factory Lead Time4 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseRadial, Side View
- Number of Pins2
- Weight135mg
- ShapeROUND
- Operating Temperature-40°C~100°C TA
- PackagingBulk
- Published2002
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureHIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER
- SubcategoryPhoto Transistors
- Voltage - Rated DC30V
- Max Power Dissipation100mW
- OrientationSide View
- Number of Functions1
- Output Voltage30V
- Lead Length12.7mm
- Operating Supply Voltage5V
- Number of Elements1
- PolarityNPN
- ConfigurationSINGLE
- Power Dissipation100mW
- Viewing Angle50°
- Output Power100mW
- Optoelectronic Device TypePHOTO TRANSISTOR
- Lens StyleDomed
- Breakdown Voltage30V
- Rise Time8μs
- Fall Time (Typ)8 μs
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current5mA
- Wavelength - Peak880 nm
- Collector Emitter Breakdown Voltage30V
- Lens ColorBlack, Clear
- Power Consumption100mW
- Max Input Current100μA
- Input Current100μA
- Dark Current100nA
- Infrared RangeYES
- Response Time-Max0.000008s
- Light Current-Nom0.25mA
- Height5.08mm
- Length4.44mm
- Width2.54mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
Description:
The QSE113 Phototransistor from Fairchild Semiconductor is a side-looking phototransistor with a peak wavelength of 880 nm. It has a power dissipation of 25 mW and is packaged in a 2-pin package.
Features:
• Peak wavelength of 880 nm
• Power dissipation of 25 mW
• 2-pin package
• Side-looking
Applications:
The QSE113 Phototransistor is suitable for use in a variety of applications, including optical sensing, light detection, and light-activated switching. It can be used in a variety of consumer electronics, such as remote controls, cameras, and gaming consoles.
The QSE113 Phototransistor from Fairchild Semiconductor is a side-looking phototransistor with a peak wavelength of 880 nm. It has a power dissipation of 25 mW and is packaged in a 2-pin package.
Features:
• Peak wavelength of 880 nm
• Power dissipation of 25 mW
• 2-pin package
• Side-looking
Applications:
The QSE113 Phototransistor is suitable for use in a variety of applications, including optical sensing, light detection, and light-activated switching. It can be used in a variety of consumer electronics, such as remote controls, cameras, and gaming consoles.
QSE113 More Descriptions
FAIRCHILD SEMICONDUCTOR QSE113 Phototransistor, 880 nm, 25 , 100 mW, 2 Pins, Side Looking
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
INFRARED PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:880nm; Power Consumption:100mW; Viewing Angle:25°; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ic Typ:1.5mA; External Depth:2.54mm; External Length / Height:5.08mm; External Width:4.44mm; Fall Time tf:8µs; Half Angle:25°; Lead Length:12.7mm; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to 100°C; Package / Case:Side Emitting; Peak Spectral Response Wavelength:880nm; Peak Wavelength:880nm; Rise Time:8µs; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Termination Type:Radial Leaded; Transistor Type:Photo; Voltage Vcc:5V
The QSE113/114 is a silicon phototransistor encapsulated in a wide angle, infrared transparent, black plastic sidelooker package.
INFRARED PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:880nm; Power Consumption:100mW; Viewing Angle:25°; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Current Ic Typ:1.5mA; External Depth:2.54mm; External Length / Height:5.08mm; External Width:4.44mm; Fall Time tf:8µs; Half Angle:25°; Lead Length:12.7mm; Operating Temperature Max:100°C; Operating Temperature Min:-40°C; Operating Temperature Range:-40°C to 100°C; Package / Case:Side Emitting; Peak Spectral Response Wavelength:880nm; Peak Wavelength:880nm; Rise Time:8µs; Storage Temperature Max:100°C; Storage Temperature Min:-40°C; Termination Type:Radial Leaded; Transistor Type:Photo; Voltage Vcc:5V
The three parts on the right have similar specifications to QSE113.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightShapeOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCMax Power DissipationOrientationNumber of FunctionsOutput VoltageLead LengthOperating Supply VoltageNumber of ElementsPolarityConfigurationPower DissipationViewing AngleOutput PowerOptoelectronic Device TypeLens StyleBreakdown VoltageRise TimeFall Time (Typ)Collector Emitter Voltage (VCEO)Max Collector CurrentWavelength - PeakCollector Emitter Breakdown VoltageLens ColorPower ConsumptionMax Input CurrentInput CurrentDark CurrentInfrared RangeResponse Time-MaxLight Current-NomHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeWavelengthCollector Emitter Saturation VoltageNumber of TerminationsTechnologyTerminal PositionNumber of ChannelsAnalog IC - Other TypeNominal Supply CurrentHigh Level Output CurrentHeight Seated (Max)View Compare
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QSE113ACTIVE (Last Updated: 18 hours ago)4 WeeksThrough HoleThrough HoleRadial, Side View2135mgROUND-40°C~100°C TABulk2002e3yesActive1 (Unlimited)EAR99Tin (Sn)HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKERPhoto Transistors30V100mWSide View130V12.7mm5V1NPNSINGLE100mW50°100mWPHOTO TRANSISTORDomed30V8μs8 μs30V5mA880 nm30VBlack, Clear100mW100μA100μA100nAYES0.000008s0.25mA5.08mm4.44mm2.54mmNo SVHCNoROHS3 CompliantLead Free----------- -
ACTIVE (Last Updated: 18 hours ago)14 WeeksThrough HoleThrough HoleRadial, Side View2135mgROUND-40°C~100°C TABulk2002e3yesActive1 (Unlimited)EAR99Tin (Sn)HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKERPhoto Transistors30V100mWSide View130V-5V1NPNSINGLE100mW50°-PHOTO TRANSISTORDomed30V8μs8 μs5V--30VBlack, Clear100mW100μA100μA100nAYES0.000008s1mA5.08mm4.44mm2.54mmNo SVHCNoROHS3 CompliantLead Free880nm400mV--------
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--Through HoleThrough Hole, Right Angle3-SIP, Side View3187.2mg--40°C~85°C TABulk--yesObsolete1 (Unlimited)-----100mWSide View1--5.5V-NPN-100mW50°--Flat-25ns20 ns-50mA-5.5VBlack---------2.54mm-NoRoHS Compliant-880nm-3BIPOLARSINGLE1ANALOG CIRCUIT15mA2μA8.69mm
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ACTIVE (Last Updated: 19 hours ago)4 WeeksThrough HoleThrough HoleRadial, Side View2135mgROUND-40°C~100°C TABulk2011e3yesActive1 (Unlimited)EAR99Tin (Sn)SIDE LOOKERPhoto Transistors30V100mWSide View130V-5V1NPNSINGLE100mW50°-PHOTO TRANSISTORDomed-8μs8 μs5V12mA-30VBlack, Clear100mW100μA100μA100nAYES0.000008s3mA5.08mm4.44mm2.54mmNo SVHCNoROHS3 CompliantLead Free880nm400mV--------
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QSE112 datasheet pdf and Optical Sensors - Phototransistors product details from ON Semiconductor stock available at Ventron
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