NXP USA Inc. PDTA123JK,115
- Part Number:
- PDTA123JK,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2472897-PDTA123JK,115
- Description:
- TRANS PREBIAS PNP 250MW SMT3
- ECAD Model:
-
- Datasheet:
- PDTA123J
NXP USA Inc. PDTA123JK,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PDTA123JK,115.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 21.36
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberPDTA123
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic100mV @ 250μA, 5mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)2.2 k Ω
- Resistor - Emitter Base (R2)47 k Ω
- RoHS StatusROHS3 Compliant
PDTA123JK,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA123JK,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA123JK,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA123JK,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA123JK,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTA123JK,115 More Descriptions
100 Ma 50 V PNP Si Small Signal Transistor TO-236
TRANS PREBIAS PNP 250MW SMT3
RESISTOR EQUIPPED TRANSISTOR
IC VOLTAGE MONITOR UNIV MICRO8
TRANS PREBIAS PNP 250MW SMT3
RESISTOR EQUIPPED TRANSISTOR
IC VOLTAGE MONITOR UNIV MICRO8
The three parts on the right have similar specifications to PDTA123JK,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)Resistor - Emitter Base (R2)RoHS StatusFactory Lead TimeMountNumber of PinsMax Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityElement ConfigurationCase ConnectionCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyFrequency - TransitionRadiation HardeningMax Output CurrentPower DissipationMax Breakdown VoltageEmitter Base Voltage (VEBO)hFE MinLead FreeView Compare
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PDTA123JK,115Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTape & Reel (TR)2009e3Obsolete1 (Unlimited)3EAR99TINBUILT-IN BIAS RESISTOR RATIO IS 21.36DUALGULL WINGNOT SPECIFIEDunknownNOT SPECIFIEDPDTA1233R-PDSO-G3Not Qualified1SINGLE WITH BUILT-IN RESISTOR250mWSWITCHINGPNPPNP - Pre-Biased100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V100mA2.2 k Ω47 k ΩROHS3 Compliant---------------------- -
Surface Mount3-XFDFN--Tape & Reel (TR)-e3Active1 (Unlimited)3-Tin (Sn)BUILT IN BIAS RESISTORBOTTOM----PDTA1433--1--SWITCHING-PNP - Pre-Biased200 @ 1mA 5V1μA150mV @ 250μA, 5mA--4.7 k Ω-ROHS3 Compliant8 WeeksSurface Mount3150°C-65°C250mWPNPSingleCOLLECTOR50V100mA50V180MHz180MHzNo------
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Surface MountSC-70, SOT-323--Tape & Reel (TR)2004e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 4.7DUALGULL WING260-40PDTA1143R-PDSO-G3-1--SWITCHING-PNP - Pre-Biased100 @ 5mA 5V1μA100mV @ 250μA, 5mA--10 k Ω47 k ΩROHS3 Compliant4 WeeksSurface Mount70150°C-65°C200mWPNPSingle-50V100mA50V--No100mA200mW50V-10V100Lead Free
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Surface MountSC-101, SOT-883--Tape & Reel (TR)2011e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT IN BIAS RESISTANCE RATIO IS 21BOTTOM----PDTA1233--1--SWITCHING-PNP - Pre-Biased100 @ 10mA 5V1μA100mV @ 250μA, 5mA--2.2 k Ω47 k ΩROHS3 Compliant8 WeeksSurface Mount3150°C-65°C250mWPNPSingleCOLLECTOR50V100mA50V180MHz-No-----Lead Free
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