NXP USA Inc. PDTA114TK,115
- Part Number:
- PDTA114TK,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2472786-PDTA114TK,115
- Description:
- TRANS PREBIAS PNP 250MW SMT3
- Datasheet:
- PDTA114TK,115
NXP USA Inc. PDTA114TK,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PDTA114TK,115.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN
- Additional FeatureBUILT IN BIAS RESISTOR
- HTS Code8541.21.00.95
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPDTA114
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max250mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA 5V
- Current - Collector Cutoff (Max)1μA
- JEDEC-95 CodeTO-236AB
- Vce Saturation (Max) @ Ib, Ic150mV @ 500μA, 10mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Resistor - Base (R1)10 k Ω
- RoHS StatusROHS3 Compliant
PDTA114TK,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA114TK,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA114TK,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA114TK,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA114TK,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTA114TK,115 More Descriptions
100 Ma 50 V PNP Si Small Signal Transistor TO-236AB
TRANS PREBIAS PNP 250MW SMT3
IC SUPERVISOR 1 CHANNEL TO92-3
TRANS PREBIAS PNP 250MW SMT3
IC SUPERVISOR 1 CHANNEL TO92-3
The three parts on the right have similar specifications to PDTA114TK,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Resistor - Base (R1)RoHS StatusResistor - Emitter Base (R2)Factory Lead TimeMountNumber of PinsMax Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityElement ConfigurationCase ConnectionCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningMax Output CurrentPower DissipationEmitter Base Voltage (VEBO)hFE MinLead FreeView Compare
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PDTA114TK,115Surface MountTO-236-3, SC-59, SOT-23-3YESSILICONTape & Reel (TR)2007e3Obsolete1 (Unlimited)3EAR99TINBUILT IN BIAS RESISTOR8541.21.00.95DUALGULL WING26040PDTA1143R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR250mWSWITCHINGPNPPNP - Pre-Biased200 @ 1mA 5V1μATO-236AB150mV @ 500μA, 10mA50V100mA10 k ΩROHS3 Compliant---------------------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)2009-Obsolete1 (Unlimited)---------PDTA113------500mW--PNP - Pre-Biased35 @ 5mA 5V1μA-150mV @ 500μA, 10mA50V100mA1 k ΩROHS3 Compliant10 k Ω-------------------
-
Surface MountSC-101, SOT-883--Tape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT IN BIAS RESISTOR-BOTTOM-26030PDTA1153---1--SWITCHING-PNP - Pre-Biased100 @ 1mA 5V1μA-150mV @ 250μA, 5mA--100 k ΩROHS3 Compliant-8 WeeksSurface Mount3150°C-65°C250mWPNPSingleCOLLECTOR50V100mA50V50VNo-----
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Surface MountSC-70, SOT-323--Tape & Reel (TR)2004e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 4.7-DUALGULL WING26040PDTA1143R-PDSO-G3--1--SWITCHING-PNP - Pre-Biased100 @ 5mA 5V1μA-100mV @ 250μA, 5mA--10 k ΩROHS3 Compliant47 k Ω4 WeeksSurface Mount70150°C-65°C200mWPNPSingle-50V100mA50V50VNo100mA200mW-10V100Lead Free
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