PBSS8110T,215

Nexperia USA Inc. PBSS8110T,215

Part Number:
PBSS8110T,215
Manufacturer:
Nexperia USA Inc.
Ventron No:
2462718-PBSS8110T,215
Description:
TRANS NPN 100V 1A SOT23
ECAD Model:
Datasheet:
PBSS8110T,215

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Comments
Specifications
Nexperia USA Inc. PBSS8110T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS8110T,215.
  • Factory Lead Time
    4 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    PBSS8110
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power - Max
    480mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    150 @ 250mA 10V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Current - Collector (Ic) (Max)
    1A
  • Transition Frequency
    100MHz
  • Frequency - Transition
    100MHz
  • RoHS Status
    ROHS3 Compliant
Description
PBSS8110T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 250mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS8110T,215 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz


PBSS8110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS8110T,215 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
PBSS8110T,215 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PBSS8110T,215 Nexperia Bipolar Transistor BJT NPN100V 1A TO236AB RoHS
Trans GP BJT NPN 100V 1A 480mW Automotive 3-Pin TO-236AB T/R
PBSS8110T - 100 V, 1 A NPN low VCEsat transistor
BISS TRANSISTOR, NPN, 100V, 1A, 3-SOT-23; BISS TRANSISTOR, NPN, 100V, 1A, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain hFE:150hFE
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 120V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 120V
Product Comparison
The three parts on the right have similar specifications to PBSS8110T,215.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Mount
    Weight
    Max Power Dissipation
    Frequency
    Polarity
    Element Configuration
    Power Dissipation
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    hFE Min
    View Compare
  • PBSS8110T,215
    PBSS8110T,215
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2001
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    DUAL
    GULL WING
    260
    40
    PBSS8110
    3
    Not Qualified
    1
    SINGLE
    480mW
    SWITCHING
    NPN
    NPN
    150 @ 250mA 10V
    100nA
    200mV @ 100mA, 1A
    100V
    1A
    100MHz
    100MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBSS2515VS,115
    4 Weeks
    Surface Mount
    SOT-563, SOT-666
    -
    6
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    6
    EAR99
    Tin (Sn)
    -
    FLAT
    -
    -
    PBSS2515
    6
    -
    2
    -
    -
    SWITCHING
    -
    2 NPN (Dual)
    150 @ 100mA 2V
    100nA ICBO
    250mV @ 50mA, 500mA
    -
    -
    420MHz
    -
    ROHS3 Compliant
    Surface Mount
    4.535924g
    200mW
    420MHz
    NPN
    Dual
    200mW
    420MHz
    15V
    500mA
    15V
    15V
    15V
    6V
    6.35mm
    6.35mm
    6.35mm
    No
    Lead Free
    -
  • PBSS4140T,215
    4 Weeks
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    DUAL
    GULL WING
    260
    40
    PBSS4140
    3
    Not Qualified
    1
    SINGLE
    450mW
    SWITCHING
    NPN
    NPN
    300 @ 500mA 5V
    100nA
    500mV @ 100mA, 1A
    40V
    1A
    150MHz
    150MHz
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PBSS4041PZ,115
    4 Weeks
    Surface Mount
    TO-261-4, TO-261AA
    -
    4
    -
    150°C TJ
    Tape & Reel (TR)
    2010
    e3
    Active
    1 (Unlimited)
    -
    -
    Tin (Sn)
    -
    -
    -
    -
    PBSS4041P
    4
    -
    1
    -
    -
    -
    -
    PNP
    200 @ 2A 2V
    100nA
    285mV @ 300mA, 6A
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    -
    2.6W
    110MHz
    -
    Single
    2.6W
    110MHz
    60V
    5.7A
    60V
    60V
    60V
    -5V
    -
    -
    -
    No
    -
    200
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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