Nexperia USA Inc. PBSS8110T,215
- Part Number:
- PBSS8110T,215
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2462718-PBSS8110T,215
- Description:
- TRANS NPN 100V 1A SOT23
- Datasheet:
- PBSS8110T,215
Nexperia USA Inc. PBSS8110T,215 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PBSS8110T,215.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPBSS8110
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max480mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce150 @ 250mA 10V
- Current - Collector Cutoff (Max)100nA
- Vce Saturation (Max) @ Ib, Ic200mV @ 100mA, 1A
- Voltage - Collector Emitter Breakdown (Max)100V
- Current - Collector (Ic) (Max)1A
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
PBSS8110T,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 250mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS8110T,215 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz
PBSS8110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS8110T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 250mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
PBSS8110T,215 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz
PBSS8110T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS8110T,215 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PBSS8110T,215 More Descriptions
Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PBSS8110T,215 Nexperia Bipolar Transistor BJT NPN100V 1A TO236AB RoHS
Trans GP BJT NPN 100V 1A 480mW Automotive 3-Pin TO-236AB T/R
PBSS8110T - 100 V, 1 A NPN low VCEsat transistor
BISS TRANSISTOR, NPN, 100V, 1A, 3-SOT-23; BISS TRANSISTOR, NPN, 100V, 1A, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain hFE:150hFE
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 120V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 120V
PBSS8110T,215 Nexperia Bipolar Transistor BJT NPN100V 1A TO236AB RoHS
Trans GP BJT NPN 100V 1A 480mW Automotive 3-Pin TO-236AB T/R
PBSS8110T - 100 V, 1 A NPN low VCEsat transistor
BISS TRANSISTOR, NPN, 100V, 1A, 3-SOT-23; BISS TRANSISTOR, NPN, 100V, 1A, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:1A; DC Current Gain hFE:150hFE
TRANSISTOR, NPN, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 300mW; DC Collector Current: 1A; DC Current Gain hFE: 150hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Collector Emitter Saturation Voltage Vce(on): 120V; Continuous Collector Current Ic Max: 1A; Current Ic @ Vce Sat: 500A; Current Ic Continuous a Max: 1A; Current Ic hFE: 1mA; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 100MHz; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 80; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to 150°C; Power Dissipation Ptot Max: 480mW; Voltage Vcbo: 120V
The three parts on the right have similar specifications to PBSS8110T,215.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusMountWeightMax Power DissipationFrequencyPolarityElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthRadiation HardeningLead FreehFE MinView Compare
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PBSS8110T,2154 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)2001e3Active1 (Unlimited)3EAR99Tin (Sn)DUALGULL WING26040PBSS81103Not Qualified1SINGLE480mWSWITCHINGNPNNPN150 @ 250mA 10V100nA200mV @ 100mA, 1A100V1A100MHz100MHzROHS3 Compliant---------------------
-
4 WeeksSurface MountSOT-563, SOT-666-6SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)6EAR99Tin (Sn)-FLAT--PBSS25156-2--SWITCHING-2 NPN (Dual)150 @ 100mA 2V100nA ICBO250mV @ 50mA, 500mA--420MHz-ROHS3 CompliantSurface Mount4.535924g200mW420MHzNPNDual200mW420MHz15V500mA15V15V15V6V6.35mm6.35mm6.35mmNoLead Free-
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES3SILICON150°C TJTape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)DUALGULL WING26040PBSS41403Not Qualified1SINGLE450mWSWITCHINGNPNNPN300 @ 500mA 5V100nA500mV @ 100mA, 1A40V1A150MHz150MHzROHS3 Compliant--------------------
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4 WeeksSurface MountTO-261-4, TO-261AA-4-150°C TJTape & Reel (TR)2010e3Active1 (Unlimited)--Tin (Sn)----PBSS4041P4-1----PNP200 @ 2A 2V100nA285mV @ 300mA, 6A----ROHS3 CompliantSurface Mount-2.6W110MHz-Single2.6W110MHz60V5.7A60V60V60V-5V---No-200
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