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NSVMUN2212T1G

ON Semiconductor NSVMUN2212T1G

Part Number:
NSVMUN2212T1G
Manufacturer:
ON Semiconductor
Ventron No:
2847343-NSVMUN2212T1G
Description:
TRANS PREBIAS NPN 230MW SC59-3
ECAD Model:
Datasheet:
NSVMUN2212T1G

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Specifications
ON Semiconductor NSVMUN2212T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMUN2212T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    230mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    MUN2212
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
    NPN
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Halogen Free
    Halogen Free
  • Transistor Type
    NPN - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • hFE Min
    60
  • Resistor - Base (R1)
    22 k Ω
  • Resistor - Emitter Base (R2)
    22 k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSVMUN2212T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVMUN2212T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVMUN2212T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSVMUN2212T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 338mW Automotive 3-Pin SC-59 T/R
NPN Bipolar Digital Transistor (BRT)
NSVMUN2212T1G: 50 V 100 22 kOhms mA SMT Digital Transistor - SC-59-3
Base Input Resistor R1:22Kohm; Rf Transistor Case:sc-59; Transistor Mounting:surface Mount; Product Range:-; Automotive Qualification Standard:aec-Q101; Msl:-; No. Of Pins:3Pins Rohs Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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