NSVBAT54WT1G

ON Semiconductor NSVBAT54WT1G

Part Number:
NSVBAT54WT1G
Manufacturer:
ON Semiconductor
Ventron No:
2422089-NSVBAT54WT1G
Description:
DIODE SCHOTTKY 30V 200MA SOT323
ECAD Model:
Datasheet:
NSVBAT54WT1G

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Specifications
ON Semiconductor NSVBAT54WT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVBAT54WT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Surface Mount
    YES
  • Number of Pins
    3
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    125°C
  • Min Operating Temperature
    -55°C
  • HTS Code
    8541.10.00.70
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Base Part Number
    BAT54W
  • Pin Count
    3
  • Reference Standard
    AEC-Q101
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    2μA @ 25V
  • Power Dissipation
    200mW
  • Voltage - Forward (Vf) (Max) @ If
    800mV @ 100mA
  • Forward Current
    200mA
  • Operating Temperature - Junction
    -55°C~125°C
  • Output Current-Max
    0.2A
  • Halogen Free
    Halogen Free
  • Current - Average Rectified (Io)
    200mA DC
  • Forward Voltage
    500mV
  • Max Reverse Voltage (DC)
    30V
  • Average Rectified Current
    200mA
  • Reverse Recovery Time
    5 ns
  • Peak Reverse Current
    2μA
  • Max Repetitive Reverse Voltage (Vrrm)
    30V
  • Capacitance @ Vr, F
    10pF @ 1V 1MHz
  • Peak Non-Repetitive Surge Current
    600mA
  • Max Forward Surge Current (Ifsm)
    600mA
  • Height
    900μm
  • Length
    2.2mm
  • Width
    1.35mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSVBAT54WT1G Overview
A rectified current of 200mA volts is averaged for this device.During its primary action, this device produces no heat.A value of 200mA is the maximum forward current that can be allowed.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 0.2A.As indicated by the data chart in the datasheets, the peak reverse is 2μA.

NSVBAT54WT1G Features
an average rectified current of 200mA volts
0.2A is the maximum value
the peak reverse is 2μA


NSVBAT54WT1G Applications
There are a lot of ON Semiconductor
NSVBAT54WT1G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
NSVBAT54WT1G More Descriptions
NSVBAT54 Series 30 V 200 mA Surface Mount Schottky Barrier Diode - SOT-323
Rectifier Diode, Schottky, 1 Phase, 1 Element, 0.2A, 30V V(RRM), Silicon
Rectifier Diode Schottky 0.2A 5ns Automotive 3-Pin SC-70 T/R
ON Semi NSVBAT54WT1G, SMT Schottky Diode, 30V 200mA, 5ns, 3-Pin SOT-323 | ON Semiconductor NSVBAT54WT1G
DIODE, SCHOTTKY, AEC-Q101, 30V, SOT-323; Diode Configuration: Single; Repetitive Reverse Voltage Vrrm Max: 30V; Forward Current If(AV): 200mA; Forward Voltage VF Max: 800mV; Forward Surge Current Ifsm Max: 600mA; Operating Temperature Max: 125°C; Diode Case Style: SOT-323; No. of Pins: 3Pins; Product Range: -; Automotive Qualification Standard: AEC-Q101; SVHC: No SVHC (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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