Vishay Semiconductor Diodes Division NSB8BTHE3/81
- Part Number:
- NSB8BTHE3/81
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 3582307-NSB8BTHE3/81
- Description:
- DIODE GEN PURP 100V 8A TO263AB
- ECAD Model:
-
- Datasheet:
- NSB8BTHE3/81
Vishay Semiconductor Diodes Division NSB8BTHE3/81 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division NSB8BTHE3/81.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Diode Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureFREE WHEELING DIODE, HIGH RELIABILITY
- HTS Code8541.10.00.80
- SubcategoryRectifier Diodes
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberNSB8B
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationCommon Cathode
- SpeedStandard Recovery >500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr10μA @ 100V
- Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
- Forward Current8A
- Operating Temperature - Junction-55°C~150°C
- Output Current-Max8A
- ApplicationGENERAL PURPOSE
- Forward Voltage1.1V
- Max Reverse Voltage (DC)100V
- Average Rectified Current8A
- Number of Phases1
- Peak Reverse Current10μA
- Max Repetitive Reverse Voltage (Vrrm)100V
- Capacitance @ Vr, F55pF @ 4V 1MHz
- Peak Non-Repetitive Surge Current125A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
NSB8BTHE3/81 Overview
The average rectified current for this device is 8A volts.When the forward current reaches 8A, it is allowed.As far as output current is concerned, 8A is the maximum.A data chart shows that the peak reverse is 10μA in the datasheets.
NSB8BTHE3/81 Features
an average rectified current of 8A volts
8A is the maximum value
the peak reverse is 10μA
NSB8BTHE3/81 Applications
There are a lot of Vishay Semiconductor Diodes Division
NSB8BTHE3/81 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
The average rectified current for this device is 8A volts.When the forward current reaches 8A, it is allowed.As far as output current is concerned, 8A is the maximum.A data chart shows that the peak reverse is 10μA in the datasheets.
NSB8BTHE3/81 Features
an average rectified current of 8A volts
8A is the maximum value
the peak reverse is 10μA
NSB8BTHE3/81 Applications
There are a lot of Vishay Semiconductor Diodes Division
NSB8BTHE3/81 applications of single-phase diode rectifier.
DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
NSB8BTHE3/81 More Descriptions
Diode 100V 8A 3-Pin(2 Tab) TO-263AB T/R
DIODE GEN PURP 100V 8A TO263AB
8A,100V,GPP,PLASTIC RECT
DIODE GEN PURP 100V 8A TO263AB
8A,100V,GPP,PLASTIC RECT
The three parts on the right have similar specifications to NSB8BTHE3/81.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentOperating Temperature - JunctionOutput Current-MaxApplicationForward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesPeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Capacitance @ Vr, FPeak Non-Repetitive Surge CurrentRadiation HardeningRoHS StatusFactory Lead TimeSeriesReach Compliance CodeOperating Temperature (Max)ConfigurationCase ConnectionVoltage - DC Reverse (Vr) (Max)Non-rep Pk Forward Current-MaxReverse Current-MaxContact PlatingMax Surge CurrentReverse VoltageView Compare
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NSB8BTHE3/81Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICONTape & Reel (TR)2011e3yesDiscontinued1 (Unlimited)2EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE, HIGH RELIABILITY8541.10.00.80Rectifier DiodesSINGLEGULL WING24540NSB8B3R-PSSO-G21Common CathodeStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 100V1.1V @ 8A8A-55°C~150°C8AGENERAL PURPOSE1.1V100V8A110μA100V55pF @ 4V 1MHz125ANoROHS3 Compliant------------- -
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICONTape & Reel (TR)2017e3-Active1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrier--FREE WHEELING DIODE8541.10.00.80-SINGLEGULL WING24530--R-PSSO-G21-Standard Recovery >500ns, > 200mA (Io)Standard10μA @ 800V1.1V @ 8A--55°C~150°C8AGENERAL PURPOSE-800V8A1--55pF @ 4V 1MHz--ROHS3 Compliant29 WeeksAutomotive, AEC-Q101unknown150°CSINGLECATHODE800V125A10μA---
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICONTape & Reel (TR)2011e3yesActive1 (Unlimited)2EAR99-150°C-55°CFREE WHEELING DIODE8541.10.00.80Rectifier DiodesSINGLEGULL WING24530-3R-PSSO-G21Common CathodeStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 400V1.1V @ 8A8A-55°C~150°C8AGENERAL PURPOSE-400V8A110μA400V55pF @ 4V 1MHz125ANoROHS3 Compliant22 Weeks--------Tin125A400V
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICONTube2011e3yesDiscontinued1 (Unlimited)2EAR99Matte Tin (Sn)150°C-55°CFREE WHEELING DIODE, HIGH RELIABILITY8541.10.00.80Rectifier DiodesSINGLEGULL WING24540NSB8M3R-PSSO-G21Common CathodeStandard Recovery >500ns, > 200mA (Io)Standard10μA @ 1000V1.1V @ 8A8A-55°C~150°C8AGENERAL PURPOSE-1kV8A110μA1kV55pF @ 4V 1MHz125ANoROHS3 Compliant------1000V-----
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