CEL NESG2107M33-A

Part Number:: NESG2107M33-A

Manufacturer:: CEL

Ventron No:: 3068536-NESG2107M33-A

Description:: TRANS NPN 2GHZ M33

ECAD Model:

Datasheet:: NESG2107M33

Specifications

CEL NESG2107M33-A technical specifications, attributes, parameters and parts with similar specifications to CEL NESG2107M33-A.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
130mW
Base Part Number
NESG2107
Power - Max
130mW
Transistor Type
NPN
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 5mA 1V
Collector Emitter Breakdown Voltage
5V
Gain
7dB ~ 10dB
Frequency - Transition
10GHz
Emitter Base Voltage (VEBO)
1.5V
Continuous Collector Current
100mA
Noise Figure (dB Typ @ f)
0.9dB ~ 1.5dB @ 2GHz
RoHS Status
RoHS Compliant

Description

NESG2107M33-A Overview
This product is manufactured by CEL and belongs to the category of Transistors - Bipolar (BJT) - RF. The images we provide are for reference only, for detailed product information please see specification sheet NESG2107M33-A or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NESG2107M33-A. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

NESG2107M33-A More Descriptions

RF Bipolar Transistors NPN Amp/Oscillator
TRANS NPN 2GHZ M33

Certification