Macronix MX25L6406EZNI-12G
- Part Number:
- MX25L6406EZNI-12G
- Manufacturer:
- Macronix
- Ventron No:
- 3835460-MX25L6406EZNI-12G
- Description:
- IC FLASH 64MBIT 86MHZ 8WSON
- Datasheet:
- MX25L6406EZNI-12G
Macronix MX25L6406EZNI-12G technical specifications, attributes, parameters and parts with similar specifications to Macronix MX25L6406EZNI-12G.
- Factory Lead Time16 Weeks
- Mounting TypeSurface Mount
- Package / Case8-WDFN Exposed Pad
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2010
- SeriesMX25xxx05/06
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations8
- ECCN Code3A991.B.1.A
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1.27mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count8
- JESD-30 CodeR-PDSO-N8
- Qualification StatusNot Qualified
- Operating Supply Voltage3.6V
- Power Supplies3/3.3V
- Supply Voltage-Min (Vsup)2.7V
- InterfaceSPI, Serial
- Memory Size64Mb 8M x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency86MHz
- Supply Current-Max0.025mA
- Memory FormatFLASH
- Memory InterfaceSPI
- Organization32MX2
- Memory Width2
- Write Cycle Time - Word, Page300μs, 5ms
- Density64 Mb
- Standby Current-Max0.00002A
- Programming Voltage3V
- Serial Bus TypeSPI
- Endurance100000 Write/Erase Cycles
- Data Retention Time-Min20
- Write ProtectionHARDWARE/SOFTWARE
- Alternate Memory Width1
- Height Seated (Max)0.8mm
- Length8mm
- Width6mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MX25L6406EZNI-12G Overview
As far as memory types are concerned, Non-Volatile is considered to be its memory type. Tray-cases are available. The file is embedded in a 8-WDFN Exposed Pad case. It is estimated that the memory size on the chip is 64Mb 8M x 8. As with most mainstream devices, this one uses FLASH-format memory. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. There are 8 terminations on the chip. In total, this part supports 1 functions. The memory device is designed to be supplied with an 3V volt power supply in order to operate properly. In the memory, there is a clock frequency rotation that ranges 86MHz. This memory device has 8 pins, indicating it has 8 memory locations. It is noted that the operating supply voltage of this memory is 3.6V. Talking about power supplies, this memory chip requires merely 3/3.3V. Its target applications rely heavily on the MX25xxx05/06 series memory devices. Data is carried and transferred to the CPU by the SPI-type serial bus this memory integrates with. As far as the supply current is concerned, it can be operated with a maximum of 0.025mA of currentA programming voltage of 3V is required to change a nonvolatile memory array's state.
MX25L6406EZNI-12G Features
Package / Case: 8-WDFN Exposed Pad
Operating Supply Voltage:3.6V
MX25L6406EZNI-12G Applications
There are a lot of Macronix MX25L6406EZNI-12G Memory applications.
cell phones
eSRAM
main computer memory
multimedia computers
networking
personal computers
printers
workstations,
supercomputers
telecommunications
As far as memory types are concerned, Non-Volatile is considered to be its memory type. Tray-cases are available. The file is embedded in a 8-WDFN Exposed Pad case. It is estimated that the memory size on the chip is 64Mb 8M x 8. As with most mainstream devices, this one uses FLASH-format memory. This device has an extended operating temperature range of -40°C~85°C TA, so it's perfect for a wide range of demanding applications. With 2.7V~3.6V as the supply voltage, it is capable of handling memory ics. It is recommended to mount it in the Surface Mount mounting type. There are 8 terminations on the chip. In total, this part supports 1 functions. The memory device is designed to be supplied with an 3V volt power supply in order to operate properly. In the memory, there is a clock frequency rotation that ranges 86MHz. This memory device has 8 pins, indicating it has 8 memory locations. It is noted that the operating supply voltage of this memory is 3.6V. Talking about power supplies, this memory chip requires merely 3/3.3V. Its target applications rely heavily on the MX25xxx05/06 series memory devices. Data is carried and transferred to the CPU by the SPI-type serial bus this memory integrates with. As far as the supply current is concerned, it can be operated with a maximum of 0.025mA of currentA programming voltage of 3V is required to change a nonvolatile memory array's state.
MX25L6406EZNI-12G Features
Package / Case: 8-WDFN Exposed Pad
Operating Supply Voltage:3.6V
MX25L6406EZNI-12G Applications
There are a lot of Macronix MX25L6406EZNI-12G Memory applications.
cell phones
eSRAM
main computer memory
multimedia computers
networking
personal computers
printers
workstations,
supercomputers
telecommunications
MX25L6406EZNI-12G More Descriptions
MX25L Series 64 Mbit (x 1/x 2) 3 V 86 MHz Industrial Grade Serial Flash- WSON-8
NOR Flash Serial (SPI, Dual SPI) 3.3V 64M-bit 64M x 8/32M x 16 8ns 8-Pin WSON EP
3A991.B.1.A Surface Mount Tray 32MX2 ic memory 86MHz 300mus 5ms 6mm 0.00002A
Product Description Demo for Development.
IC FLASH 64MBIT SPI 86MHZ 8WSON
NOR Flash Serial (SPI, Dual SPI) 3.3V 64M-bit 64M x 8/32M x 16 8ns 8-Pin WSON EP
3A991.B.1.A Surface Mount Tray 32MX2 ic memory 86MHz 300mus 5ms 6mm 0.00002A
Product Description Demo for Development.
IC FLASH 64MBIT SPI 86MHZ 8WSON
The three parts on the right have similar specifications to MX25L6406EZNI-12G.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Supply VoltagePower SuppliesSupply Voltage-Min (Vsup)InterfaceMemory SizeMemory TypeOperating ModeClock FrequencySupply Current-MaxMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageDensityStandby Current-MaxProgramming VoltageSerial Bus TypeEnduranceData Retention Time-MinWrite ProtectionAlternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusLead FreeNumber of PinsJESD-609 CodeTerminal FinishAdditional FeatureTime@Peak Reflow Temperature-Max (s)Supply Voltage-Max (Vsup)Memory DensityPbfree CodeView Compare
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MX25L6406EZNI-12G16 WeeksSurface Mount8-WDFN Exposed PadYES-40°C~85°C TATray2010MX25xxx05/06Not For New Designs3 (168 Hours)83A991.B.1.A8542.32.00.51FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIED8R-PDSO-N8Not Qualified3.6V3/3.3V2.7VSPI, Serial64Mb 8M x 8Non-VolatileSYNCHRONOUS86MHz0.025mAFLASHSPI32MX22300μs, 5ms64 Mb0.00002A3VSPI100000 Write/Erase Cycles20HARDWARE/SOFTWARE10.8mm8mm6mmROHS3 CompliantLead Free---------
-
16 WeeksSurface Mount16-SOIC (0.295, 7.50mm Width)YES-40°C~85°C TATube-MX25xxx35/36 - MXSMIO™Active3 (168 Hours)16--FLASH - NOR2.7V~3.6VDUAL26013V1.27mm-16----2.7VSPI, Serial128Mb 16M x 8Non-VolatileSYNCHRONOUS104MHz-FLASHSPI32MX4430μs, 1.5ms--3V----22.65mm10.3mm7.52mmROHS3 Compliant-16e3MATTE TIN (800)CAN BE ORGNISED AS 128 MBIT X 1403.6V134217728 bit-
-
10 WeeksSurface Mount8-WDFN Exposed PadYES-40°C~85°C TATray2010MX25xxx05/06Active3 (168 Hours)8EAR998542.32.00.51FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mm-8R-PDSO-N8Not Qualified3.6V3/3.3V2.7VSPI, Serial2Mb 256K x 8Non-VolatileSYNCHRONOUS86MHz0.02mAFLASHSPI1MX2250μs, 3ms2 Mb0.00001A2.7VSPI100000 Write/Erase Cycles20HARDWARE/SOFTWARE10.8mm6mm5mmROHS3 CompliantLead Free----NOT SPECIFIED---
-
16 WeeksSurface Mount8-SOIC (0.209, 5.30mm Width)YES-40°C~85°C TATube2016MX25xxx05/06Not For New Designs3 (168 Hours)8EAR998542.32.00.51FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V1.27mmNOT SPECIFIED8R-PDSO-G8Not Qualified3.6V3/3.3V2.7VSPI, Serial16Mb 2M x 8Non-VolatileSYNCHRONOUS86MHz0.025mAFLASHSPI8MX2250μs, 3ms16 Mb0.00002A2.7VSPI100000 Write/Erase Cycles-HARDWARE/SOFTWARE12.16mm5.28mm5.23mmROHS3 CompliantLead Free-e3Matte Tin (Sn) - annealed----yes
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