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MURA120T3G

ON Semiconductor MURA120T3G

Part Number:
MURA120T3G
Manufacturer:
ON Semiconductor
Ventron No:
2419572-MURA120T3G
Description:
DIODE GEN PURP 200V 2A SMA
ECAD Model:
Datasheet:
MURA120T3G

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Specifications
ON Semiconductor MURA120T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MURA120T3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    DO-214AC, SMA
  • Surface Mount
    YES
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Voltage - Rated DC
    200V
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    2A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    MURA120
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    2μA @ 200V
  • Output Current
    1A
  • Voltage - Forward (Vf) (Max) @ If
    875mV @ 1A
  • Forward Current
    2A
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    40A
  • Application
    GENERAL PURPOSE
  • Halogen Free
    Halogen Free
  • Breakdown Voltage
    200V
  • Forward Voltage
    875mV
  • Max Reverse Voltage (DC)
    200V
  • Average Rectified Current
    2A
  • Number of Phases
    1
  • Reverse Recovery Time
    35 ns
  • Peak Reverse Current
    2μA
  • Max Repetitive Reverse Voltage (Vrrm)
    200V
  • Peak Non-Repetitive Surge Current
    40A
  • Reverse Voltage
    200V
  • Max Forward Surge Current (Ifsm)
    40A
  • Recovery Time
    35 ns
  • Height
    2.05mm
  • Length
    4.57mm
  • Width
    2.92mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MURA120T3G Overview
An acceptable reverse voltage would be 200V.As a result, this device has a rectified current of 2A volts on average.Phase diode rectifier is permissible for forward current to reach 2A.Fuse elements have an indefinite life expectancy of 2A, which is the maximum current that the fuse can carry for an indefinite period of time.There is no maximum value for 40A surge current.Based on the data charts in the datasheets, the peak reverse is 2μA.Diodes have a breakdown voltage 200V, which is the maximum reverse voltage that can be applied without causing an exponential increase in their leakage current.

MURA120T3G Features
an average rectified current of 2A volts
a current rating of 2A
the peak reverse is 2μA
the breakdown voltage of a diode is 200V


MURA120T3G Applications
There are a lot of ON Semiconductor
MURA120T3G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MURA120T3G More Descriptions
Diode Rectifier MURA120T3/MURA120T3G ON SEMI RoHS Ampere=1 V=200 SMA
Power Rectifier, Ultra-Fast Recovery, 1 A, 150 V 200 V
Rectifier Diode, 1 Phase, 1 Element, 2A, 200V V(RRM), Silicon
MURA Series 1 A 200 V 35 ns Surface Mount Ultrafast Power Rectifier - CASE-403D
ON Semi MURA120T3G; SMT Diode; 200V 2A; 35ns; 2-Pin DO-214AC
Rectifier Diode Switching 200V 2A 35ns 2-Pin SMA T/R
DIODE, FAST, 1A, 200V, SMA; Repetitive Reverse Voltage Vrrm Max: 200V; Forward Current If(AV): 1A; Diode Configuration: Single; Forward Voltage VF Max: 875mV; Reverse Recovery Time trr Max: 35ns; Forward Surge Current Ifsm Ma
Product Comparison
The three parts on the right have similar specifications to MURA120T3G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Diode Element Material
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Output Current
    Voltage - Forward (Vf) (Max) @ If
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Halogen Free
    Breakdown Voltage
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Max Forward Surge Current (Ifsm)
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Reach Compliance Code
    JESD-30 Code
    Qualification Status
    Reference Standard
    View Compare
  • MURA120T3G
    MURA120T3G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    4 Weeks
    Tin
    Surface Mount
    DO-214AC, SMA
    YES
    2
    SILICON
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    200V
    DUAL
    C BEND
    260
    2A
    40
    MURA120
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    2μA @ 200V
    1A
    875mV @ 1A
    2A
    -65°C~175°C
    40A
    GENERAL PURPOSE
    Halogen Free
    200V
    875mV
    200V
    2A
    1
    35 ns
    2μA
    200V
    40A
    200V
    40A
    35 ns
    2.05mm
    4.57mm
    2.92mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • MURA240T3
    MURA240T3
    ON Semiconductor
    -
    -
    -
    Surface Mount
    DO-214AC, SMA
    -
    -
    SILICON
    Tape & Reel (TR)
    2002
    e0
    -
    Obsolete
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    400V
    DUAL
    C BEND
    240
    2A
    30
    MURA240
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 400V
    2A
    1.3V @ 2A
    -
    -65°C~175°C
    35A
    HIGH VOLTAGE ULTRA FAST RECOVERY POWER
    -
    -
    -
    400V
    2A
    1
    65 ns
    5μA
    -
    -
    400V
    -
    65 ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Surface Mount
    Tin/Lead (Sn/Pb)
    not_compliant
    R-PDSO-C2
    Not Qualified
    -
    MURA120T3G vs MURA240T3
  • MURA260T3G
    MURA260T3G
    ON Semiconductor
    ACTIVE (Last Updated: 4 days ago)
    5 Weeks
    Tin
    Surface Mount
    DO-214AC, SMA
    YES
    2
    SILICON
    Tape & Reel (TR)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    -
    600V
    DUAL
    C BEND
    260
    2A
    40
    MURA260
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 600V
    2A
    1.45V @ 2A
    2A
    -65°C~175°C
    30A
    HIGH VOLTAGE ULTRA FAST RECOVERY POWER
    Halogen Free
    -
    1.45V
    600V
    2A
    1
    75 ns
    5μA
    600V
    30A
    600V
    30A
    75 ns
    2.05mm
    4.57mm
    2.92mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    MURA120T3G vs MURA260T3G
  • MURA210T3G
    MURA210T3G
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    9 Weeks
    -
    Surface Mount
    DO-214AC, SMA
    YES
    2
    SILICON
    Cut Tape (CT)
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    -
    100V
    DUAL
    C BEND
    -
    2A
    -
    MURA210
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    2μA @ 100V
    2A
    940mV @ 2A
    2A
    -65°C~175°C
    50A
    GENERAL PURPOSE
    Halogen Free
    -
    940mV
    100V
    2A
    1
    30 ns
    2μA
    100V
    50A
    100V
    50A
    30 ns
    2mm
    4.57mm
    2.92mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    Tin (Sn)
    -
    -
    -
    AEC-Q101
    MURA120T3G vs MURA210T3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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