MUR20060CTR

GeneSiC Semiconductor MUR20060CTR

Part Number:
MUR20060CTR
Manufacturer:
GeneSiC Semiconductor
Ventron No:
2420105-MUR20060CTR
Description:
DIODE MODULE 600V 200A 2TOWER
ECAD Model:
Datasheet:
MUR20060CTR

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
GeneSiC Semiconductor MUR20060CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MUR20060CTR.
  • Lifecycle Status
    PRODUCTION (Last Updated: 4 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2013
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Operating Temperature (Max)
    175°C
  • Number of Elements
    2
  • Element Configuration
    Common Anode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    25μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.7V @ 50A
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    800A
  • Output Current-Max
    100A
  • Application
    SUPER FAST RECOVERY
  • Current - Average Rectified (Io)
    200A DC
  • Max Reverse Voltage (DC)
    600V
  • Average Rectified Current
    200A
  • Number of Phases
    1
  • Reverse Recovery Time
    110 ns
  • Peak Reverse Current
    25μA
  • Non-rep Pk Forward Current-Max
    400A
  • Reverse Voltage
    600V
  • Diode Configuration
    1 Pair Common Anode
  • RoHS Status
    RoHS Compliant
Description
MUR20060CTR Overview
A maximum output voltage of 100A can be supported.Surge currents should be monitored and prevented from exceeding 800A.A reverse voltage peak of 25μA is used to power devices like this one.

MUR20060CTR Features
a maximum output voltage of 100A
a peak voltage of 25μA
a reverse voltage peak of 25μA


MUR20060CTR Applications
There are a lot of GeneSiC Semiconductor
MUR20060CTR applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MUR20060CTR More Descriptions
600V 200A Twin Tower Silicon Rectifier Module - Super Fast Recovery (Reverse Configuration)
DIODE MODULE GP 600V 100A 2TOWER
Rect, Fast, Dual Comn And, 200A, 600V, 2-Tower; Diode Module Configuration:1 Pair Common Anode; Forward Current If(Av):200A; Forward Voltage Vf Max:1.7V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.