MUR20010CT

MOTOROLA MUR20010CT

Part Number:
MUR20010CT
Manufacturer:
MOTOROLA
Ventron No:
5721075-MUR20010CT
Description:
Power IGBT Module
ECAD Model:
Datasheet:
MUR20010CT

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Specifications
MOTOROLA MUR20010CT technical specifications, attributes, parameters and parts with similar specifications to MOTOROLA MUR20010CT.
  • Lifecycle Status
    PRODUCTION (Last Updated: 6 months ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Chassis Mount
  • Mounting Type
    Chassis Mount
  • Package / Case
    Twin Tower
  • Diode Element Material
    SILICON
  • Packaging
    Bulk
  • Published
    2010
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • HTS Code
    8541.10.00.80
  • Terminal Position
    UPPER
  • Terminal Form
    UNSPECIFIED
  • JESD-30 Code
    R-PUFM-X2
  • Operating Temperature (Max)
    175°C
  • Number of Elements
    2
  • Element Configuration
    Common Cathode
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    25μA @ 50V
  • Voltage - Forward (Vf) (Max) @ If
    1.3V @ 100A
  • Operating Temperature - Junction
    -55°C~150°C
  • Max Surge Current
    800A
  • Output Current-Max
    100A
  • Application
    SUPER FAST RECOVERY
  • Current - Average Rectified (Io)
    200A DC
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    200A
  • Number of Phases
    1
  • Reverse Recovery Time
    75 ns
  • Peak Reverse Current
    25μA
  • Reverse Voltage
    100V
  • Diode Configuration
    1 Pair Common Cathode
  • RoHS Status
    RoHS Compliant
Description
MUR20010CT Overview
A maximum output voltage of 100A is supported by array.Array should be a rule to monArrayor the surge current and not allow Array to exceed 800A.Typical devices like this one are powered by reverse voltage peaks of 25μA.

MUR20010CT Features
a maximum output voltage of 100A
a peak voltage of 25μA
a reverse voltage peak of 25μA


MUR20010CT Applications
There are a lot of GeneSiC Semiconductor
MUR20010CT applications of rectifier diode array.


Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MUR20010CT More Descriptions
100V 200A Twin Tower Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
DIODE MODULE GP 100V 100A 2TOWER
Rectifiers 100V 200A Super Fast Recovery
Rect, Fast, Dual Comn Cthd, 200A, 100V, 2-Tower; Diode Module Configuration:1 Pair Common Cathode; Forward Current If(Av):200A; Forward Voltage Vf Max:1.3V; No. Of Phases:single; Repetitive Reverse Voltage Vrrm Max:100V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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