GeneSiC Semiconductor MUR10060CTR
- Part Number:
- MUR10060CTR
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2419880-MUR10060CTR
- Description:
- DIODE MODULE 600V 100A 2TOWER
- ECAD Model:
-
- Datasheet:
- MUR10060CTR
GeneSiC Semiconductor MUR10060CTR technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MUR10060CTR.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published2003
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- HTS Code8541.10.00.80
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- Element ConfigurationCommon Anode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr25μA @ 50V
- Voltage - Forward (Vf) (Max) @ If1.7V @ 50A
- Forward Current50A
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current400A
- ApplicationSUPER FAST RECOVERY
- Current - Average Rectified (Io)100A DC
- Forward Voltage1.7V
- Max Reverse Voltage (DC)600V
- Average Rectified Current100A
- Number of Phases1
- Reverse Recovery Time110 ns
- Peak Reverse Current25μA
- Max Repetitive Reverse Voltage (Vrrm)600V
- Reverse Voltage600V
- Diode Configuration1 Pair Common Anode
- Max Forward Surge Current (Ifsm)400A
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
MUR10060CTR Overview
In this case, the forward voltage has to be set at 1.7V to operate the device.Maintaining a surge current under 400A and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 50A to operate the device.A reverse voltage peak of 25μA is applied to devices like this one.
MUR10060CTR Features
1.7V forward voltage
a peak voltage of 25μA
a reverse voltage peak of 25μA
MUR10060CTR Applications
There are a lot of GeneSiC Semiconductor
MUR10060CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
In this case, the forward voltage has to be set at 1.7V to operate the device.Maintaining a surge current under 400A and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 50A to operate the device.A reverse voltage peak of 25μA is applied to devices like this one.
MUR10060CTR Features
1.7V forward voltage
a peak voltage of 25μA
a reverse voltage peak of 25μA
MUR10060CTR Applications
There are a lot of GeneSiC Semiconductor
MUR10060CTR applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MUR10060CTR More Descriptions
600 V 100 A Twin Tower Silicon Super Fast Recovery Rectifier
Diode Switching 600V 100A 3-Pin Twin Tower
Diode, Rectif, 600V, 100A, Twin Tow
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
Diode Switching 600V 100A 3-Pin Twin Tower
Diode, Rectif, 600V, 100A, Twin Tow
Rectifiers SI S-FST RECOV 2TWR 50-600V100A600P/420R
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