ON Semiconductor MUN5132T1G
- Part Number:
- MUN5132T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2847323-MUN5132T1G
- Description:
- TRANS PREBIAS PNP 202MW SC70-3
- Datasheet:
- MUN5132T1G
ON Semiconductor MUN5132T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5132T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time2 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation202mW
- Current Rating-100mA
- Base Part NumberMUN51**T
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation202mW
- Halogen FreeHalogen Free
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
- Collector Emitter Breakdown Voltage50V
- hFE Min15
- Resistor - Base (R1)4.7 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)4.7 k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN5132T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5132T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5132T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5132T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5132T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5132T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
MUN Series 50 V 100 mA 4.7 kOhm PNP Silicon Bias Resistor Transistor - SOT-323
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R - Tape and Reel
PNP Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 4.7K/4.7K, Sc-70-3; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MUN5132T1G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
MUN Series 50 V 100 mA 4.7 kOhm PNP Silicon Bias Resistor Transistor - SOT-323
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R - Tape and Reel
PNP Bipolar Digital Transistor (BRT)
Brt Transistor, 50V, 4.7K/4.7K, Sc-70-3; Transistor Polarity:Single Pnp; Collector Emitter Voltage Max Npn:-; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:-; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MUN5132T1G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
The three parts on the right have similar specifications to MUN5132T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeMountNumber of TerminationsAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusTransistor ApplicationHTS CodeView Compare
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MUN5132T1GACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountSC-70, SOT-323YES3Tape & Reel (TR)2009e3yesActive1 (Unlimited)EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal-50V202mW-100mAMUN51**T3100mA50V1PNPSingle202mWHalogen FreePNP - Pre-Biased50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V154.7 k Ω100mA4.7 k ΩNoROHS3 CompliantLead Free-------------
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--Surface MountSC-70, SOT-323--Tape & Reel (TR)2007e0-Obsolete1 (Unlimited)EAR99Tin/Lead (Sn/Pb)150°C-55°CBIP General Purpose Small Signal50V202mW100mAMUN52**T3--1NPNSingle202mW-NPN - Pre-Biased250mV100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V82.2 k Ω100mA2.2 k Ω-Non-RoHS CompliantContains LeadSurface Mount3BUILT IN BIAS RESISTOR RATIO 1DUALGULL WING240not_compliant30R-PDSO-G3Not QualifiedSWITCHING-
-
--Surface MountSC-70, SOT-323-3Tape & Reel (TR)2004e0noObsolete1 (Unlimited)EAR99Tin/Lead (Sn/Pb)150°C-55°CBIP General Purpose Small Signal-50V202mW-100mAMUN51**T3--1PNPSingle202mW-PNP - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V8047 k Ω100mA47 k Ω-Non-RoHS CompliantContains LeadSurface Mount3BUILT IN BIAS RESISTANCE RATIO IS 1DUALGULL WING240not_compliant30-Not QualifiedSWITCHING8541.21.00.95
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ACTIVE (Last Updated: 3 days ago)13 WeeksSurface MountSC-70, SOT-323YES3Tape & Reel (TR)2013e3yesActive1 (Unlimited)EAR99Tin (Sn)150°C-55°CBIP General Purpose Small Signal-202mW--3--1PNPSingle-Halogen FreePNP - Pre-Biased250mV100mA120 @ 5mA 10V500nA250mV @ 1mA, 10mA50V12047 k Ω--NoROHS3 CompliantLead Free-3BUILT IN BIAS RESISTORDUALGULL WING-----SWITCHING-
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