ON Semiconductor MUN5114T1G
- Part Number:
- MUN5114T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2471648-MUN5114T1G
- Description:
- TRANS PREBIAS PNP 202MW SC70-3
- Datasheet:
- MUN5114T1G
ON Semiconductor MUN5114T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUN5114T1G.
- Lifecycle StatusACTIVE (Last Updated: 2 days ago)
- Factory Lead Time5 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Number of Pins3
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Additional FeatureBUILT-IN BIAS RESISTOR RATIO IS 4.7
- HTS Code8541.21.00.95
- SubcategoryBIP General Purpose Small Signal
- Voltage - Rated DC-50V
- Max Power Dissipation202mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-100mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberMUN51**T
- Pin Count3
- Max Output Current100mA
- Operating Supply Voltage50V
- Number of Elements1
- PolarityPNP
- Element ConfigurationSingle
- Power Dissipation202mW
- Transistor ApplicationSWITCHING
- Halogen FreeHalogen Free
- Transistor TypePNP - Pre-Biased
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA
- Collector Emitter Breakdown Voltage50V
- Max Breakdown Voltage50V
- hFE Min80
- Resistor - Base (R1)10 k Ω
- Continuous Collector Current100mA
- Resistor - Emitter Base (R2)47 k Ω
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
MUN5114T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5114T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5114T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet MUN5114T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of MUN5114T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
MUN5114T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
MUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-323
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R - Tape and Reel
PNP Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Digital Transistor Polarity:Single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1/R2:0.21(Ratio) Rohs Compliant: Yes |Onsemi MUN5114T1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
MUN Series 50 V 100 mA 10 kOhm PNP Silicon Bias Resistor Transistor - SOT-323
Trans Digital BJT PNP 50V 100mA 3-Pin SC-70 T/R - Tape and Reel
PNP Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Digital Transistor Polarity:Single Pnp; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:10Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1/R2:0.21(Ratio) Rohs Compliant: Yes |Onsemi MUN5114T1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
The three parts on the right have similar specifications to MUN5114T1G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsPackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureHTS CodeSubcategoryVoltage - Rated DCMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountMax Output CurrentOperating Supply VoltageNumber of ElementsPolarityElement ConfigurationPower DissipationTransistor ApplicationHalogen FreeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageMax Breakdown VoltagehFE MinResistor - Base (R1)Continuous Collector CurrentResistor - Emitter Base (R2)Radiation HardeningRoHS StatusLead FreeMountReach Compliance CodeJESD-30 CodeQualification StatusView Compare
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MUN5114T1GACTIVE (Last Updated: 2 days ago)5 WeeksSurface MountSC-70, SOT-323YES3Tape & Reel (TR)2004e3yesActive1 (Unlimited)3EAR99Tin (Sn)150°C-55°CBUILT-IN BIAS RESISTOR RATIO IS 4.78541.21.00.95BIP General Purpose Small Signal-50V202mWDUALGULL WING260-100mA40MUN51**T3100mA50V1PNPSingle202mWSWITCHINGHalogen FreePNP - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V50V8010 k Ω100mA47 k ΩNoROHS3 CompliantLead Free-----
-
--Surface MountSC-70, SOT-323--Tape & Reel (TR)2007e0-Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT IN BIAS RESISTOR RATIO 1-BIP General Purpose Small Signal50V202mWDUALGULL WING240100mA30MUN52**T3--1NPNSingle202mWSWITCHING-NPN - Pre-Biased250mV100mA8 @ 5mA 10V500nA250mV @ 5mA, 10mA50V-82.2 k Ω100mA2.2 k Ω-Non-RoHS CompliantContains LeadSurface Mountnot_compliantR-PDSO-G3Not Qualified
-
--Surface MountSC-70, SOT-323-3Tape & Reel (TR)2004e0noObsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)150°C-55°CBUILT IN BIAS RESISTANCE RATIO IS 18541.21.00.95BIP General Purpose Small Signal-50V202mWDUALGULL WING240-100mA30MUN51**T3--1PNPSingle202mWSWITCHING-PNP - Pre-Biased50V100mA80 @ 5mA 10V500nA250mV @ 300μA, 10mA50V-8047 k Ω100mA47 k Ω-Non-RoHS CompliantContains LeadSurface Mountnot_compliant-Not Qualified
-
ACTIVE (Last Updated: 4 days ago)2 WeeksSurface MountSC-70, SOT-323YES3Tape & Reel (TR)2009e3yesActive1 (Unlimited)-EAR99Tin (Sn)150°C-55°C--BIP General Purpose Small Signal-50V202mW----100mA-MUN51**T3100mA50V1PNPSingle202mW-Halogen FreePNP - Pre-Biased50V100mA15 @ 5mA 10V500nA250mV @ 1mA, 10mA50V-154.7 k Ω100mA4.7 k ΩNoROHS3 CompliantLead Free----
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